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Metal gate

A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material.

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Metrics Summary

Total Publications

Lifetime

3,804

Prior Five Years

632

Total Citations

Lifetime

36,320

Prior Five Years

1,578

Total Scholars

Lifetime

6,431

Prior Five Years

4,866

Institutional Rankings

Global (Worldwide)

Academic Institutions Lifetime			Non-academic Institutions Lifetime
#1	University of Notre Dame United States	N/A	#1	Intel Corporation United States
#2	North Carolina State University United States		#2	International Business Machines Corporation United States
#3	Fudan University China		#3	Taiwan Semiconductor Manufacturing Company Limited Taiwan
#4	University of Texas at Dallas United States		#4	GLOBALFOUNDRIES Inc. Singapore
			#5	Institute of Microelectronics Singapore
			#6	Texas Instruments Incorporated United States
			#7	Applied Materials, Inc. United States
			#8	Fujitsu Ltd. Japan
			#9	ARM Limited
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National Institutional Rankings

Publications and Citation History

Publications based on Disciplines

Scholars based on Disciplines

Publications based on Fields

Scholars based on Fields

Highly Ranked Scholars™

Lifetime

Prior Five Years

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Highly Cited Publications

Lifetime