Steffen Breuer
ScholarGPS® ID: 88357784347608
Affiliation History
Discipline
Physics
Top Specialties
Nanowire | Optoelectronics | Microelectronics | Crystal Growth
Metrics Summary
Publication Count
32
Predicted Citations
1,612
Predicted h-index
18
Ranking
Publications and Citation History
Publications based on Top Specialties
Types of Publication
- Publications
- Books
- Patents
- NIH/NSF
Add
Delete
|
---|
Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire (journal article) Nano Research, volume 11, issue 9, pages 4708-4721 (2018). |
Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases (journal article) Journal of Applied Physics, volume 117, issue 5 (2015). |
Enhanced Minority Carrier Lifetimes in GaAs/AlGaAs Core–Shell Nanowires through Shell Growth Optimization (journal article) Nano Letters, volume 13, issue 11, pages 5135-5140 (2013). |
Distribution of zinc‐blende twins and wurtzite segments in GaAs nanowires probed by X‐ray nanodiffraction (journal article) physica status solidi (RRL) – Rapid Research Letters, volume 7, issue 10, pages 860-863 (2013). |
Twinning Superlattice Formation in GaAs Nanowires (journal article) ACS Nano, volume 7, issue 9, pages 8105-8114 (2013). |
Nanowire solar cells for next-generation photovoltaics (journal article) SPIE Newsroom (2013). |
Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast (journal article) Applied Physics Letters, volume 103, issue 4 (2013). |
Droplet Bulge Effect on the Formation of Nanowire Side Facets (journal article) Crystal Growth & Design, volume 13, issue 7, pages 2749-2755 (2013). |
Nano Letters, volume 13, issue 4, pages 1405-1409 (2013). |
Advanced Optoelectronics for Energy and Environment (2013) Wuhan |
Nanoscale Research Letters, volume 7, issue 1 (2012). |
MOCVD growth of GaAs nanowires using Ga droplets (conference) 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD) (2012) Melbourne, Australia |
Influence of growth temperature and V/III ratio on Au-assisted In<inf>x</inf>Ga<inf>1−x</inf>As nanowires (conference) 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD) (2012) Melbourne, Australia |
InP nanowires grown by SA-MOVPE (conference) 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD) (2012) Melbourne, Australia |
2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD) (2012) Melbourne, Australia |
Improvement of minority carrier lifetime in GaAs/Al<inf>x</inf>Ga<inf>1−x</inf>As core-shell nanowires (conference) 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD) (2012) Melbourne, Australia |
Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy (journal article) Nanoscale Research Letters, volume 7, issue 1 (2012). |
Nanotechnology, volume 23, issue 30, pages 305703- (2012). |
Band gap of wurtzite GaAs: A resonant Raman study (journal article) Physical Review B, volume 86, issue 7 (2012). |
Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires (journal article) Applied Physics Letters, volume 101, issue 2 (2012). |