Justin C. Goodrich

ScholarGPS™ ID: 85884050908498

Affiliation

Lehigh University, Bethlehem, United States

Affiliation History

Field

Engineering and Computer Science

Discipline

Electrical and Computer Engineering

Top Specialties

Laser | Photonics

Metrics Summary

Publication Count

Predicted Citations

Predicted h-index

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF


Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters (journal article) Sun, Wei \| Fu, Hanlin \| Borovac, Damir \| Goodrich, Justin C. \| Tan, Chee-Keong \| Tansu, Nelson IEEE Journal of Quantum Electronics, volume 58, issue 2, pages 1-6 (2022). 10.1109/JQE.2022.3143573 Cited by (1) \| Cite \| Source
Gain Properties of Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers (conference) Fu, Hanlin \| Sun, Wei \| Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson 2021 IEEE Photonics Conference (IPC) (2021) Vancouver, BC, Canada 10.1109/IPC48725.2021.9592870 Cite \| Source
Power electronics figure-of-merit of ScAlN (journal article) Fu, Hanlin \| Goodrich, Justin C. \| Ogidi-Ekoko, Onoriode \| Tansu, Nelson Applied Physics Letters, volume 119, issue 7 (2021). 10.1063/5.0057412 Cited by (4) \| Cite \| Source
Band structures and heterojunction alignment of ScAlN alloy (conference) Fu, Hanlin \| Goodrich, Justin C. \| Tansu, Nelson Gallium Nitride Materials and Devices XVI (2021) Online Only, United States 10.1117/12.2579138 Cite \| Source
Dilute-As InGaNAs quantum wells for red-emitting laser active regions (conference) Fu, Hanlin \| Sun, Wei \| Goodrich, Justin C. \| Borovac, Damir \| Tansu, Nelson Novel In-Plane Semiconductor Lasers XX (2021) Online Only, United States 10.1117/12.2578751 Cite \| Source
Efficient hole-doping in dilute-anion III-nitrides (conference) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson Gallium Nitride Materials and Devices XVI (2021) Online Only, United States 10.1117/12.2578892 Cite \| Source
Prospects for hole doping in dilute-anion III-nitrides (journal article) Goodrich, Justin C. \| Tan, Chee-Keong \| Borovac, Damir \| Tansu, Nelson Applied Physics Letters, volume 118, issue 7 (2021). 10.1063/5.0042316 Cited by (1) \| Cite \| Source
Band alignment of ScAlN/GaN heterojunction (journal article) Fu, Hanlin \| Goodrich, Justin C. \| Tansu, Nelson Applied Physics Letters, volume 117, issue 23 (2020). 10.1063/5.0029488 Cited by (7) \| Cite \| Source
Electrical properties of MgO/GaN metal-oxide-semiconductor structures (journal article) Ogidi-Ekoko, Onoriode N. \| Goodrich, Justin C. \| Howzen, Alexandra J. \| Peart, Matthew R. \| Strandwitz, Nicholas C. \| Wierer, Jonathan J. \| Tansu, Nelson Solid-State Electronics, volume 172 (2020). 10.1016/j.sse.2020.107881 Cited by (6) \| Cite \| Source
Band Alignment of Nearly Lattice-Matched ScAlN/GaN Heterojunction (conference) Fu, Hanlin \| Goodrich, Justin C. \| Tansu, Nelson 2020 IEEE Photonics Conference (IPC) (2020) Vancouver, BC, Canada 10.1109/IPC47351.2020.9252472 Cite \| Source
p-type Doping of Dilute-Anion III-Nitride Materials (conference) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson 2020 IEEE Photonics Conference (IPC) (2020) Vancouver, BC, Canada 10.1109/IPC47351.2020.9252377 Cite \| Source
Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition (journal article) Goodrich, Justin C. \| Farinha, Thomas G. \| Ju, Ling \| Howzen, Alexandra J. \| Kundu, Animesh \| Ogidi-Ekoko, Onoriode N. \| Wierer, Jonathan J. \| Tansu, Nelson \| Strandwitz, Nicholas C. Journal of Crystal Growth, volume 536 (2020). 10.1016/j.jcrysgro.2020.125568 Cited by (6) \| Cite \| Source
Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation) (conference) Goodrich, Justin \| Fu, Hanlin \| Borovac, Damir \| Tansu, Nelson Gallium Nitride Materials and Devices XV (2020) San Francisco, United States 10.1117/12.2548752 Cite \| Source
InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation) (conference) Fu, Hanlin \| Borovac, Damir \| Goodrich, Justin \| Ogidi-Ekoko, Onoriode \| Tansu, Nelson Novel In-Plane Semiconductor Lasers XIX (2020) San Francisco, United States 10.1117/12.2548652 Cite \| Source
Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes (journal article) Fu, Hanlin \| Goodrich, Justin C. \| Ogidi-Ekoko, Onoriode \| Tansu, Nelson Journal of Applied Physics, volume 126, issue 13 (2019). 10.1063/1.5120302 Cited by (4) \| Cite \| Source
Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys (conference) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson 2019 IEEE Photonics Conference (IPC) (2019) San Antonio, TX, USA 10.1109/IPCon.2019.8908412 Cite \| Source
Gain Properties of Type-II AlInN / ZnGeN2 Quantum Wells for Ultraviolet Laser Diodes (conference) Fu, Hanlin \| Goodrich, Justin C. \| Tansu, Nelson 2019 IEEE Photonics Conference (IPC) (2019) San Antonio, TX, USA 10.1109/IPCon.2019.8908493 Cite \| Source
Gain characteristics of InGaN quantum wells with AlGaInN barriers (journal article) Fu, Hanlin \| Sun, Wei \| Ogidi-Ekoko, Onoriode \| Goodrich, Justin C. \| Tansu, Nelson AIP Advances, volume 9, issue 4 (2019). 10.1063/1.5086979 Cited by (5) \| Cite \| Source
Band Anti-Crossing Model in Dilute-As GaNAs Alloys (journal article) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson Scientific Reports, volume 9, issue 1 (2019). 10.1038/s41598-019-41286-y Cited by (9) \| Cite \| Source
Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys (conference) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson 2018 IEEE Photonics Conference (IPC) (2018) Reston, VA 10.1109/IPCon.2018.8527219 Cite \| Source