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Shota Sambonsuge

ScholarGPS® ID: 85432969066314

Affiliation

Tohoku University, Sendai, Japan

Affiliation History

Field

Physical Sciences and Mathematics

Discipline

Physics

Top Specialties

Epitaxy

Metrics Summary

Publication Count

9

Predicted Citations

69

Predicted h-index

6

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF

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Semiconductor device and method for manufacturing semiconductor device (patent) Murakawa, Tsutomu \| Takeuchi, Toshihiko \| Komagata, Hiroki \| Sawai, Hiromi \| Yamane, Yasumasa \| Sambonsuge, Shota \| Sugimoto, Kazuya \| Yamazaki, Shunpei Patent Number: 10600875 (2020) Cite \| Source
Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110) (journal article) Sambonsuge, Shota \| Jiao, Sai \| Nagasawa, Hiroyuki \| Fukidome, Hirokazu \| Filimonov, Sergey N. \| Suemitsu, Maki Diamond and Related Materials, volume 67 (2016). 10.1016/j.diamond.2016.02.020 Cited by (6) \| Cite \| Source
Evaluations of crystal defects of 3C‐SiC film on Si(110) substrate (journal article) Sambonsuge, Shota \| Ito, Shun \| Jiao, Sai \| Nagasawa, Hiroyuki \| Fukidome, Hirokazu \| Filimonov, Sergey N. \| Suemitsu, Maki physica status solidi (a), volume 213, issue 5, pages 1125-1129 (2016). 10.1002/pssa.201532675 Cited by (4) \| Cite \| Source
In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si (journal article) Hasegawa, Mika \| Sugawara, Kenta \| Suto, Ryota \| Sambonsuge, Shota \| Teraoka, Yuden \| Yoshigoe, Akitaka \| Filimonov, Sergey \| Fukidome, Hirokazu \| Suemitsu, Maki Nanoscale Research Letters, volume 10, issue 1 (2015). 10.1186/s11671-015-1131-9 Cited by (15) \| Cite \| Source \| Open Access
Analysis and Experimental Proof of Deterioration-free Memory Device Using CAAC-IGZO FET (conference) Tsubuku, M. \| Takeuchi, T. \| Ohshima, K. \| Murakawa, T. \| Fujita, M. \| Shimada, D. \| Sambonsuge, S. \| Atsumi, T. \| Sakakura, M. \| Kato, K. \| ... \| Yamazaki, S. 2015 International Conference on Solid State Devices and Materials (2015) Sapporo Convention Center, Sapporo, Japan 10.7567/SSDM.2015.O-1-4 Cited by (4) \| Cite \| Source
Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth (journal article) Sambonsuge, S. \| Nikitina, L. N. \| Hervieu, Yu. Yu. \| Suemitsu, M. \| Filimonov, S. N. Russian Physics Journal, volume 56, issue 12, pages 1439-1444 (2014). 10.1007/s11182-014-0197-7 Cited by (7) \| Cite \| Source
High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon (journal article) Suemitsu, Maki \| Sanbonsuge, Shota \| Saito, Eiji \| Jung, Myung Ho \| Fukidome, Hirokazu \| Filimonov, Sergey Materials Science Forum, volume 740-742 (2013). 10.4028/www.scientific.net/MSF.740-742.327 Cited by (1) \| Cite \| Source
Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy (journal article) Sambonsuge, Shota \| Saito, Eiji \| Jung, Myung Ho \| Fukidome, Hirokazu \| Filimonov, Sergey \| Suemitsu, Maki Materials Science Forum, volume 740-742 (2013). 10.4028/www.scientific.net/MSF.740-742.339 Cited by (7) \| Cite \| Source
Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment (journal article) Sanbonsuge, Shota \| Abe, Shunsuke \| Handa, Hiroyuki \| Takahashi, Ryota \| Imaizumi, Kei \| Fukidome, Hirokazu \| Suemitsu, Maki Japanese Journal of Applied Physics, volume 51, issue 6S, pages 06FD10- (2012). 10.1143/JJAP.51.06FD10 Cited by (6) \| Cite \| Source