Andrew A. Allerman | Scholar Profiles and Rankings

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Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts (journal article) Klein, Brianna \| Allerman, Andrew \| Armstrong, Andrew \| Rosprim, Mary \| Tyznik, Colin \| Zhu, Yinxuan \| Joishi, Chandan \| Chae, Chris \| Rajan, Siddharth Advanced Materials Interfaces (2024). 10.1002/admi.202301080 Cite \| Source
Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air (journal article) Klein, B. A. \| Allerman, A. A. \| Armstrong, A. M. Applied Physics Letters, volume 124, issue 10 (2024). 10.1063/5.0185336 Cited by (1) \| Cite \| Source
Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices (journal article) Binder, Andrew T. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Rummel, Brian D. \| Glaser, Caleb \| Yates, Luke \| Kaplar, Robert J. IEEE Transactions on Electron Devices, volume 71, issue 3, pages 1541-1545 (2024). 10.1109/TED.2023.3344057 Cited by (1) \| Cite \| Source
Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells (journal article) Ghosh, Arnob \| Dominic Merwin Xavier, Agnes Maneesha \| Hasan, Syed M N \| Rahman, Sheikh Ifatur \| Blackston, Alex \| Allerman, Andrew \| Myers, Roberto C \| Rajan, Siddharth \| Arafin, Shamsul Journal of Physics D: Applied Physics, volume 57, issue 3, pages 035105- (2024). 10.1088/1361-6463/ad039c Cite \| Source
(Invited) Advanced Design Concepts for Vertical Gallium Nitride MOSFETs (journal article) Binder, Andrew T. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Glaser, Caleb E. \| Yates, Luke \| Floyd, Richard \| Smith, Michael L. \| Rummel, Brian D. \| Reilly, Kevin J. \| Sharps, Paul \| ... \| Cooper, James A. ECS Meeting Abstracts, volume MA2023-02, issue 35, pages 1679-1679 (2023). 10.1149/MA2023-02351679mtgabs Cite \| Source
(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes (journal article) Allerman, Andrew A. \| Binder, Andrew T. \| Armstrong, Andrew M. \| Steinfeldt, Jeffrey \| Kaplar, Robert J. ECS Meeting Abstracts, volume MA2023-02, issue 35, pages 1688-1688 (2023). 10.1149/MA2023-02351688mtgabs Cite \| Source
Etch Depth Study for Step-Etched Junction Termination Extensions in Vertical GaN Devices (conference) Binder, Andrew T. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Rummel, Brian D. \| Glaser, Caleb \| Yates, Luke \| Kaplar, Robert J. 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) (2023) Charlotte, NC, USA 10.1109/WiPDA58524.2023.10382203 Cite \| Source
Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield (journal article) Binder, Andrew T. \| Cooper, James A. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Floyd, Richard \| Yates, Luke \| Kaplar, Robert J. e-Prime - Advances in Electrical Engineering, Electronics and Energy, volume 5 (2023). 10.1016/j.prime.2023.100218 Cited by (4) \| Cite \| Source
Multi-active region AlGaN UV LEDs with transparent tunnel junctions (journal article) Dominic Merwin Xavier, Agnes Maneesha \| Ghosh, Arnob \| Rahman, Sheikh Ifatur \| Allerman, Andrew \| Verma, Darpan \| Myers, Roberto C. \| Arafin, Shamsul \| Rajan, Siddharth Applied Physics Express, volume 16, issue 8, pages 082001- (2023). 10.35848/1882-0786/acea1b Cited by (1) \| Cite \| Source
Origins of epitaxial macro-terraces and macro-steps on GaN substrates (journal article) Liao, Michael E. \| Olsen, William L. \| Huynh, Kenny \| Luccioni, Dorian P. \| Wang, Yekan \| Huang, XianRong \| Wojcik, Michael J. \| Allerman, Andrew A. \| Goorsky, Mark S. Journal of Applied Physics, volume 133, issue 18 (2023). 10.1063/5.0147667 Cited by (1) \| Cite \| Source
Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions (journal article) Dominic Merwin Xavier, Agnes Maneesha \| Ghosh, Arnob \| Rahman, Sheikh Ifatur \| Allerman, Andrew \| Arafin, Shamsul \| Rajan, Siddharth Applied Physics Letters, volume 122, issue 8 (2023). 10.1063/5.0122919 Cited by (3) \| Cite \| Source
AlGaN High Electron Mobility Transistor for High-Temperature Logic (journal article) Klein, B. A. \| Allerman, A. A. \| Baca, A. G. \| Nordquist, C. D. \| Armstrong, A. M. \| Van Heukelom, M. \| Rice, A. \| Patel, V. \| Rosprim, M. \| Caravello, L. \| ... \| Kaplar, R. J. Journal of Microelectronics and Electronic Packaging, volume 20, issue 1, pages 1-8 (2023). 10.4071/imaps.1832996 Cited by (2) \| Cite \| Source
Towards Electrically-Pumped AlGaN UV-A Lasers with Transparent Tunnel Junctions (conference) Ghosh, Arnob \| Xavier, Agnes M. D. M. \| Rahman, Sheikh Ifatur \| Allerman, Andrew \| Rajan, Siddharth \| Arafin, Shamsul CLEO: Science and Innovations (2023) San Jose, CA 10.1364/CLEO_SI.2023.SF2Q.5 Cite \| Source
(Invited) Electron Channeling Contrast Imaging for Rapid Characterization of Compound Semiconductors (journal article) Deitz, Julia \| Ruggles, Timothy \| Lee, Stephen \| Allerman, Andrew A. \| Carter, C Barry \| Michael, Joseph ECS Meeting Abstracts, volume MA2022-02, issue 34, pages 1254-1254 (2022). 10.1149/MA2022-02341254mtgabs Cite \| Source
(Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains (journal article) Binder, Andrew T. \| Allerman, Andrew A. \| Glaser, Caleb E. \| Yates, Luke \| Rummel, Brian D. \| Smith, Trevor \| Dickerson, Jeramy R. \| Steinfeldt, Jeffrey \| Pickrell, Gregory \| Sharps, Paul \| ... \| Cooper, James A. ECS Meeting Abstracts, volume MA2022-02, issue 37, pages 1361-1361 (2022). 10.1149/MA2022-02371361mtgabs Cite \| Source
Vertical Gallium Nitride MOSFETs for Electric Drivetrains. (conference) Binder, Andrew \| Allerman, Andrew \| Glaser, Caleb \| Yates, Luke \| Rummel, Brian \| Smith, Trevor \| Dickerson, Jeramy \| Steinfeldt, Jeffrey \| Pickrell, Gregory \| Sharps, Paul \| ... \| Cooper, James Proposed for presentation at the 242nd Electrochemical Society Meeting in , (2022) 10.2172/2005505 Cite \| Source
Electron Channeling Contrast Imaging (ECCI) for Rapid Characterization of Compound Semiconductors. (conference) Deitz, Julia \| Ruggles, Timothy \| Lee, Stephen \| Allerman, Andrew \| Barry Carter, C. \| Michael, Joseph Proposed for presentation at the Electrochemical Society Fall Meeting in , (2022) 10.2172/2005415 Cite \| Source
Ultra-wide Bandgap AlGaN Alloys for Power Diodes and Transistors (invited). (conference) Allerman, Andrew \| Crawford, Mary \| Armstrong, Andrew \| Binder, Andrew \| Yates, Luke \| Kaplar, Robert \| Steinfeldt, Jeffrey \| Smith, Michael Proposed for presentation at the International Workshop on Nitride Semiconductors (IWN 2022) held October 9-14, 2022 in Berlin, Germany (2022) 10.2172/2005348 Cite \| Source
Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes (journal article) Deitz, Julia I \| Sugar, Joshua D \| Kiefer, Boris \| Baldonado, Nicholas S \| Allerman, Andrew A \| Crawford, Mary H Microscopy and Microanalysis, volume 28, issue S1, pages 2010-2011 (2022). 10.1017/S1431927622007802 Cite \| Source
AlGaN High Electron Mobility Transistor for High Temperature Logic. (conference) Klein, Brianna \| Allerman, Andrew \| Baca, Albert \| Nordquist, Christopher \| Armstrong, Andrew \| Van Heukelom, Michael \| Rice, Anthony \| Patel, Victor \| Rosprim, Mary \| Caravello, Lisa \| ... \| Kaplar, Robert Proposed for presentation at the HiTEN 2022, International Conference and Exhibition on High Temperature Electronics Network held July 18-20, 2022 in Oxford, United Kingdom (2022) 10.2172/2003976 Cite \| Source