Shunri Oda | Scholar Profiles and Rankings

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Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 (book) MDPI (2024) 10.3390/books978-3-7258-0119-0 Cite \| Source
Graphene-based midinfrared photodetector with bull’s eye plasmonic antenna (journal article) Deng, Xiangying \| Oda, Shunri \| Kawano, Yukio Optical Engineering, volume 62, issue 09 (2023). 10.1117/1.OE.62.9.097102 Cited by (4) \| Cite \| Source
Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors (journal article) Kawanago, Takamasa \| Matsuzaki, Takahiro \| Oda, Shunri Japanese Journal of Applied Physics, volume 59, issue 12, pages 120903- (2020). 10.35848/1347-4065/abc6be Cited by (2) \| Cite \| Source
Temperature dependence of hole transport properties through physically defined silicon quantum dots (journal article) Shimatani, N. \| Yamaoka, Y. \| Ishihara, R. \| Andreev, A. \| Williams, D. A. \| Oda, S. \| Kodera, T. Applied Physics Letters, volume 117, issue 9 (2020). 10.1063/5.0010981 Cited by (4) \| Cite \| Source
Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures (journal article) Hiraoka, S. \| Horibe, K. \| Ishihara, R. \| Oda, S. \| Kodera, T. Applied Physics Letters, volume 117, issue 7 (2020). 10.1063/5.0010906 Cited by (5) \| Cite \| Source
Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors (journal article) Simanullang, Marolop Dapot Krisman \| Wisna, G. Bimananda M. \| Usami, Koichi \| Oda, Shunri Nanoscale Advances, volume 2, issue 4, pages 1465-1472 (2020). 10.1039/D0NA00023J Cited by (1) \| Cite \| Source
Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface (journal article) Fukumoto, Keiki \| Seyhan, Ayse \| Onda, Ken \| Oda, Shunri \| Koshihara, Shin-ya Applied Physics Letters, volume 115, issue 5 (2019). 10.1063/1.5097611 Cited by (3) \| Cite \| Source
Physically defined triple quantum dot systems in silicon on insulator (journal article) Mizokuchi, R. \| Oda, S. \| Kodera, T. Applied Physics Letters, volume 114, issue 7 (2019). 10.1063/1.5063741 Cited by (12) \| Cite \| Source
Transfer printing of Al2 O3 gate dielectric for fabrication of top-gate MoS2 FET (journal article) Kawanago, Takamasa \| Oba, Tomoaki \| Oda, Shunri Applied Physics Express, volume 12, issue 2, pages 026501- (2019). 10.7567/1882-0786/aaf995 Cited by (7) \| Cite \| Source
Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift (journal article) Takeda, K. \| Yoneda, J. \| Otsuka, T. \| Nakajima, T. \| Delbecq, M. R. \| Allison, G. \| Hoshi, Y. \| Usami, N. \| Itoh, K. M. \| Oda, S. \| ... \| Tarucha, S. npj Quantum Information, volume 4, issue 1 (2018). 10.1038/s41534-018-0105-z Cited by (34) \| Cite \| Source
An electronic synaptic device based on HfO2 TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics (journal article) Liu, Jian \| Yang, Huafeng \| Ji, Yang \| Ma, Zhongyuan \| Chen, Kunji \| Zhang, Xinxin \| Zhang, Hui \| Sun, Yang \| Huang, Xinfan \| Oda, Shunri Nanotechnology, volume 29, issue 41, pages 415205- (2018). 10.1088/1361-6528/aad64d Cited by (35) \| Cite \| Source \| Open Access
Low-Dimensional-Structure Devices for Future ElectronicsBehaviors (conference) Oda, Shunri \| Kawanago, Takamasa \| Wakabayashi, Hitoshi 2018 International Semiconductor Conference (CAS) (2018) Sinaia 10.1109/SMICND.2018.8539751 Cite \| Source
Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET (conference) Kawanago, Takamasa \| Oba, Tomoaki \| Ikoma, Ryo \| Takagi, Hiroyuki \| Oda, Shunri 48th European Solid-State Device Research Conference (ESSDERC 2018) (2018) Dresden 10.1109/ESSDERC.2018.8486878 Cite \| Source
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% (journal article) Yoneda, Jun \| Takeda, Kenta \| Otsuka, Tomohiro \| Nakajima, Takashi \| Delbecq, Matthieu R. \| Allison, Giles \| Honda, Takumu \| Kodera, Tetsuo \| Oda, Shunri \| Hoshi, Yusuke \| ... \| Tarucha, Seigo Nature Nanotechnology, volume 13, issue 2, pages 102-106 (2018). 10.1038/s41565-017-0014-x Cited by (613) \| Cite \| Source \| Open Access
Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2 O3 /HfO2 /Al2 O3 sandwich structure (journal article) Liu, Jian \| Yang, Huafeng \| Ma, Zhongyuan \| Chen, Kunji \| Zhang, Xinxin \| Huang, Xinfan \| Oda, Shunri Journal of Physics D: Applied Physics, volume 51, issue 2, pages 025102- (2018). 10.1088/1361-6463/aa9c15 Cited by (30) \| Cite \| Source \| Open Access
Physically Defined Coupled Silicon Quantum Dots Containing a Few Electrons for Electron Spin Qubits (book chapter) In Emerging Devices for Low-Power and High-Performance Nanosystems Kodera, Tetsuo \| Horibe, Kosuke \| Oda, Shunri Jenny Stanford Publishing (2018) 10.1201/9780429458736-6 Cite \| Source
Low dimensional (0D, 1D, 2D) devices for future electronics (conference) Oda, Shunri 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC) (2017) Singapore 10.1109/NMDC.2017.8350547 Cite \| Source
Silicon nanodevices for intelligent communications (conference) Oda, S. 2017 IEEE 30th International Conference on Microelectronics (MIEL) (2017) Nis 10.1109/MIEL.2017.8190060 Cite \| Source
Transfer printing of nanostructured membrane with elastomeric stamp and its application to TMDC-based field-effect transistors (conference) Kawanago, Takamasa \| Du, Wanjing \| Ikoma, Ryo \| Oba, Tomoaki \| Takagi, Hiroyuki \| Oda, Shunri 2017 17th International Workshop on Junction Technology (IWJT) (2017) Uji, Japan 10.23919/IWJT.2017.7966509 Cited by (1) \| Cite \| Source
Charge sensing and spin-related transport property of p-channel silicon quantum dots (journal article) Yamaoka, Yu \| Iwasaki, Kazuma \| Oda, Shunri \| Kodera, Tetsuo Japanese Journal of Applied Physics, volume 56, issue 4S, pages 04CK07- (2017). 10.7567/JJAP.56.04CK07 Cited by (18) \| Cite \| Source \| Open Access