Kangguo Cheng | Scholar Profiles and Rankings

Publications and Citation History

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Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks (journal article) Han, Jin-Ping \| Rasch, Malte J. \| Liu, Zuoguang \| Solomon, Paul \| Brew, Kevin \| Cheng, Kangguo \| Ok, Injo \| Chan, Victor \| Longstreet, Michael \| Kim, Wanki \| ... \| Narayanan, Vijay Advanced Intelligent Systems, volume 4, issue 5 (2022). 10.1002/aisy.202100179 Cited by (4) \| Cite \| Source
Combination of tensilely strained n-type fin field effect transistors and compressively strained p-type fin field effect transistors (patent) Cheng, Kangguo Patent Number: 10879132 (2020) Cite \| Source
Steep-switch field effect transistor with integrated bi-stable resistive system (patent) Frougier, Julien \| Loubet, Nicolas \| Xie, Ruilong \| Chanemougame, Daniel \| Razavieh, Ali \| Cheng, Kangguo Patent Number: 10872962 (2020) Cite \| Source
Uniform fin dimensions using fin cut hardmask (patent) Cheng, Kangguo \| Xu, Peng Patent Number: 10854753 (2020) Cite \| Source
Improved Air Spacer for Highly Scaled CMOS Technology (journal article) Cheng, Kangguo \| Park, Chanro \| Wu, Heng \| Li, Juntao \| Nguyen, Son \| Zhang, Jingyun \| Wang, Miaomiao \| Mehta, Sanjay \| Liu, Zuoguang \| Conti, Richard \| ... \| Divakaruni, Rama IEEE Transactions on Electron Devices, volume 67, issue 12, pages 5355-5361 (2020). 10.1109/TED.2020.3031878 Cited by (7) \| Cite \| Source
Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy (patent) Cheng, Kangguo \| Li, Juntao Patent Number: 10847639 (2020) Cite \| Source
Fin cut forming single and double diffusion breaks (patent) Li, Juntao \| Wang, Junli \| Cheng, Kangguo \| Xie, Ruilong Patent Number: 10840147 (2020) Cite \| Source
Nanosheet and nanowire MOSFET with sharp source/drain junction (patent) Chang, Josephine B. \| Cheng, Kangguo \| Guillorn, Michael A. \| Miao, Xin Patent Number: 10840381 (2020) Cite \| Source
Transistor with airgap spacer and tight gate pitch (patent) Cheng, Kangguo Patent Number: 10840351 (2020) Cite \| Source
Formation of air gap spacers for reducing parasitic capacitance (patent) Cheng, Kangguo \| Xu, Peng \| Lee, Choonghyun \| Wu, Heng Patent Number: 10840349 (2020) Cite \| Source
Nanosheet transistor having improved bottom isolation (patent) Xie, Ruilong \| Cheng, Kangguo \| Yeh, Chun-Chen Patent Number: 10840329 (2020) Cite \| Source
One-time programmable device compatible with vertical transistor processing (patent) Cheng, Kangguo \| Li, Juntao \| Xie, Ruilong \| Park, Chanro Patent Number: 10840148 (2020) Cite \| Source
Vertical field-effect transistor devices with non-uniform thickness bottom spacers (patent) Li, Juntao \| Cheng, Kangguo \| Lee, ChoongHyun \| Mochizuki, Shogo Patent Number: 10840145 (2020) Cite \| Source
Stress modulation of nFET and pFET fin structures (patent) Zhou, Huimei \| Cheng, Kangguo \| Belyansky, Michael P. \| Gluschenkov, Oleg \| Conti, Richard A. \| Kelly, James \| Pranatharthiharan, Balasubramanian Patent Number: 10832973 (2020) Cite \| Source
Fully aligned via formation without metal recessing (patent) Park, Chanro \| Xie, Ruilong \| Cheng, Kangguo \| Li, Juntao Patent Number: 10832947 (2020) Cite \| Source
Gate contact over active region with self-aligned source/drain contact (patent) Fan, Su Chen \| Chi, Cheng \| Cheng, Kangguo \| Xie, Ruilong Patent Number: 10832943 (2020) Cite \| Source
Self-aligned gate isolation with asymmetric cut placement (patent) Xie, Ruilong \| Radens, Carl \| Cheng, Kangguo \| Basker, Veeraraghavan S. Patent Number: 10832916 (2020) Cite \| Source
Gate-all-around field-effect transistor devices having source/drain extension contacts to channel layers for reduced parasitic resistance (patent) Cheng, Kangguo \| Song, Yi \| Bi, Zhenxing Patent Number: 10832907 (2020) Cite \| Source
III-V segmented finFET free of wafer bonding (patent) Miao, Xin \| Zhang, Chen \| Cheng, Kangguo \| Xu, Wenyu Patent Number: 10833158 (2020) Cite \| Source
iFinFET (patent) Li, Juntao \| Cheng, Kangguo \| Zhang, Chen \| Miao, Xin Patent Number: 10833157 (2020) Cite \| Source