Hotaka Maruyama

ScholarGPS® ID: 69792357236146

Affiliation

Semicondutor Energy Laboratory Co., Ltd.

Affiliation History

Field

Engineering and Computer Science

Discipline

Electrical and Computer Engineering

Top Specialties

Semiconductor | Semiconductor Device | Manufacturing | Digital Imaging

Metrics Summary

Publication Count

Predicted Citations

405

Predicted h-index

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF

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Light-emitting device and method for manufacturing the same (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 10672915 (2020) Cited by (1) \| Cite \| Source
Light-emitting device and manufacturing method thereof (patent) Eguchi, Shingo \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 10374184 (2019) Cited by (2) \| Cite \| Source
Method for manufacturing semiconductor device (patent) Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 10297679 (2019) Cite \| Source
Semiconductor device and manufacturing method thereof (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 10243005 (2019) Cite \| Source
Method for manufacturing semiconductor device having oxide semiconductor (patent) Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 9887276 (2018) Cite \| Source
Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka \| Tsubuku, Masashi Patent Number: 9837442 (2017) Cited by (4) \| Cite \| Source
Light-emitting device and manufacturing method thereof (patent) Eguchi, Shingo \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 9666820 (2017) Cited by (4) \| Cite \| Source
Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka \| Tsubuku, Masashi Patent Number: 9583509 (2017) Cited by (9) \| Cite \| Source
Semiconductor device with oxide semiconductor layer (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Noda, Kosei \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Maruyama, Hotaka Patent Number: 9537012 (2017) Cited by (1) \| Cite \| Source
Semiconductor device and manufacturing method thereof (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 9466756 (2016) Cited by (3) \| Cite \| Source
Semiconductor device comprising oxide semiconductor layer (patent) Oikawa, Yoshiaki \| Maruyama, Hotaka \| Godo, Hiromichi \| Kawae, Daisuke \| Yamazaki, Shunpei Patent Number: 9431427 (2016) Cite \| Source
Light-emitting device and method for manufacturing the same (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 9431465 (2016) Cited by (4) \| Cite \| Source
Semiconductor device and manufacturing method thereof (patent) Yamazaki, Shunpei \| Maruyama, Hotaka \| Oikawa, Yoshiaki \| Tochibayashi, Katsuaki Patent Number: 9391095 (2016) Cited by (13) \| Cite \| Source
Light-emitting device and method for manufacturing the same (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 8957411 (2015) Cited by (6) \| Cite \| Source
Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state and is in contact with an insulating (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka \| Tsubuku, Masashi Patent Number: 8885115 (2014) Cited by (11) \| Cite \| Source
Method of manufacturing thin film transistor with oxide semiconductor using sputtering method (patent) Oikawa, Yoshiaki \| Maruyama, Hotaka \| Godo, Hiromichi \| Kawae, Daisuke \| Yamazaki, Shunpei Patent Number: 8877569 (2014) Cite \| Source
Semiconductor device wherein an oxide semiconductor layer comprises a crystal and has a degree of crystallization of 80% or more (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka \| Tsubuku, Masashi Patent Number: 9153602 (2014) Cited by (13) \| Cite \| Source
Semiconductor device and manufacturing method thereof (patent) Yamazaki, Shunpei \| Maruyama, Hotaka \| Oikawa, Yoshiaki \| Tochibayashi, Katsuaki Patent Number: 8664036 (2014) Cited by (16) \| Cite \| Source
Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second ins (patent) Yamazaki, Shunpei \| Sakata, Junichiro \| Sakakura, Masayuki \| Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka \| Tsubuku, Masashi Patent Number: 8654272 (2014) Cited by (19) \| Cite \| Source
Method for manufacturing semiconductor device (patent) Oikawa, Yoshiaki \| Okazaki, Kenichi \| Maruyama, Hotaka Patent Number: 8637347 (2014) Cited by (17) \| Cite \| Source