Robert J. Kaplar | Scholar Profiles and Rankings

Publications and Citation History

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Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN (journal article) Jacobs, Alan G. \| Feigelson, Boris N. \| Lundh, James S. \| Spencer, Joseph A. \| Freitas, Jaime A. \| Gunning, Brendan P. \| Kaplar, Robert J. \| Zhang, Yuhao \| Tadjer, Marko J. \| Hobart, Karl D. \| Anderson, Travis J. physica status solidi (a) (2024). 10.1002/pssa.202400080 Cite \| Source
Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3 TRB Testing (conference) Rummel, B.D. \| Glaser, C.E. \| Gurule, R.T. \| Groves, M. \| Binder, A.T. \| Floyd, R. \| Yates, L. \| Reilly, K.J. \| Kaplar, R.J. 2024 IEEE International Reliability Physics Symposium (IRPS) (2024) Grapevine, TX, USA 10.1109/IRPS48228.2024.10529461 Cite \| Source
Detecting defects that reduce breakdown voltage using machine learning and optical profilometry (journal article) Gallagher, James C. \| Mastro, Michael A. \| Jacobs, Alan G. \| Kaplar, Robert. J. \| Hobart, Karl D. \| Anderson, Travis J. Scientific Reports, volume 14, issue 1 (2024). 10.1038/s41598-024-57875-5 Cite \| Source
Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design (journal article) Senarath, A. S. \| Islam, S. \| Sengupta, A. \| McCurdy, M. W. \| Anderson, T. \| Jacobs, A. \| Kaplar, R. \| Ball, D. R. \| Zhang, E. X. \| Pantelides, S. T. \| ... \| Schrimpf, R. D. Applied Physics Letters, volume 124, issue 13 (2024). 10.1063/5.0189744 Cite \| Source
Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices (journal article) Binder, Andrew T. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Rummel, Brian D. \| Glaser, Caleb \| Yates, Luke \| Kaplar, Robert J. IEEE Transactions on Electron Devices, volume 71, issue 3, pages 1541-1545 (2024). 10.1109/TED.2023.3344057 Cited by (1) \| Cite \| Source
A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution (journal article) Gill, Lee \| DasGupta, Sandeepan \| Neely, Jason C. \| Kaplar, Robert J. \| Michaels, Alan J. IEEE Transactions on Power Electronics, volume 39, issue 1, pages 517-537 (2024). 10.1109/TPEL.2023.3318182 Cited by (6) \| Cite \| Source
Improving vertical GaN p–n diode performance with room temperature defect mitigation (journal article) Sultan Al-Mamun, Nahid \| Gallagher, James \| Jacobs, Alan G \| Hobart, Karl D \| Anderson, Travis J \| Gunning, Brendan P \| Kaplar, Robert J \| Wolfe, Douglas E \| Haque, Aman Semiconductor Science and Technology, volume 39, issue 1, pages 015004- (2024). 10.1088/1361-6641/ad10c3 Cited by (1) \| Cite \| Source
(Invited) Advanced Design Concepts for Vertical Gallium Nitride MOSFETs (journal article) Binder, Andrew T. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Glaser, Caleb E. \| Yates, Luke \| Floyd, Richard \| Smith, Michael L. \| Rummel, Brian D. \| Reilly, Kevin J. \| Sharps, Paul \| ... \| Cooper, James A. ECS Meeting Abstracts, volume MA2023-02, issue 35, pages 1679-1679 (2023). 10.1149/MA2023-02351679mtgabs Cite \| Source
(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes (journal article) Allerman, Andrew A. \| Binder, Andrew T. \| Armstrong, Andrew M. \| Steinfeldt, Jeffrey \| Kaplar, Robert J. ECS Meeting Abstracts, volume MA2023-02, issue 35, pages 1688-1688 (2023). 10.1149/MA2023-02351688mtgabs Cite \| Source
Co-optimization Design and Analysis of WBG and UWBG Power Diodes with Operational Regimes (conference) Gill, Lee \| Shoemaker, Jonah \| Flicker, Jack \| Goodnick, Stephen \| Kaplar, Robert \| Michaels, Alan 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) (2023) Charlotte, NC, USA 10.1109/WiPDA58524.2023.10382225 Cite \| Source
Etch Depth Study for Step-Etched Junction Termination Extensions in Vertical GaN Devices (conference) Binder, Andrew T. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Rummel, Brian D. \| Glaser, Caleb \| Yates, Luke \| Kaplar, Robert J. 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) (2023) Charlotte, NC, USA 10.1109/WiPDA58524.2023.10382203 Cite \| Source
Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes (journal article) Ebrish, Mona A. \| Porter, Matthew \| Jacobs, Alan \| Gallagher, James C. \| Kaplar, Robert J. \| Gunning, Brendan P. \| Hobart, Karl D. \| Anderson, Travis J. Applied Physics Express, volume 16, issue 11, pages 116501- (2023). 10.35848/1882-0786/ad0655 Cited by (2) \| Cite \| Source
Novel Dynamic ON-Resistance Measurement Circuit Topology, Operation, and Performance for High Voltage GaN Power HEMTs (conference) Gill, Lee \| Garcia Rodriguez, Luciano Andres \| Mueller, Jacob \| Kaplar, Robert \| Michaels, Alan J. 2023 IEEE Energy Conversion Congress and Exposition (ECCE) (2023) Nashville, TN, USA 10.1109/ECCE53617.2023.10362641 Cite \| Source
Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors (journal article) Rummel, B. D. \| Cooper, J. A. \| Morisette, D. T. \| Yates, L. \| Glaser, C. E. \| Binder, A. T. \| Ramadoss, K. \| Kaplar, R. J. Journal of Applied Physics, volume 134, issue 12 (2023). 10.1063/5.0158333 Cite \| Source
Machine Learning Based Non-Intrusive Inspection Technique to Quantify GaN HEMT Characteristics (conference) Gill, Lee \| Actor, Jonas \| Kaplar, Robert J. \| Michaels, Alan J. 2023 IEEE Design Methodologies Conference (DMC) (2023) Miami, FL, USA 10.1109/DMC58182.2023.10412423 Cite \| Source
Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield (journal article) Binder, Andrew T. \| Cooper, James A. \| Steinfeldt, Jeffrey \| Allerman, Andrew A. \| Floyd, Richard \| Yates, Luke \| Kaplar, Robert J. e-Prime - Advances in Electrical Engineering, Electronics and Energy, volume 5 (2023). 10.1016/j.prime.2023.100218 Cited by (4) \| Cite \| Source
Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources (journal article) Mazumder, Sudip K. \| Voss, Lars F. \| Dowling, Karen M. \| Conway, Adam \| Hall, David \| Kaplar, Robert J. \| Pickrell, Gregory W. \| Flicker, Jack \| Binder, Andrew T. \| Chowdhury, Srabanti \| ... \| Charles, Alain B. IEEE Journal of Emerging and Selected Topics in Power Electronics, volume 11, issue 4, pages 3957-3982 (2023). 10.1109/JESTPE.2023.3277828 Cited by (10) \| Cite \| Source
Microstructural evolution of extended defects in 25 μ m thick GaN homo-epitaxial layers (journal article) Liao, Michael E. \| Mahadik, Nadeemullah A. \| Gallagher, James C. \| Gunning, Brendan P. \| Kaplar, Robert J. \| Anderson, Travis J. Applied Physics Letters, volume 122, issue 24 (2023). 10.1063/5.0152720 Cite \| Source
Multi-Objective Parametric Analysis of EV Traction Inverter between Reliability and Efficiency (conference) Gill, Lee \| Rashkin, Lee \| Yates, Luke \| Neely, Jason \| Kaplar, Robert 2023 IEEE Applied Power Electronics Conference and Exposition (APEC) (2023) Orlando, FL, USA 10.1109/APEC43580.2023.10131644 Cited by (1) \| Cite \| Source
Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications (journal article) Garcia Rodriguez, Luciano Andres \| Gill, Lee \| Mueller, Jacob A. \| Neely, Jason \| Baker, Gary \| Flicker, Jack \| Schrock, Emily \| Pickrell, Gregory \| Kaplar, Robert IEEE Transactions on Industry Applications, volume 59, issue 2, pages 2326-2339 (2023). 10.1109/TIA.2022.3229655 Cited by (2) \| Cite \| Source