Massimo V. Fischetti

ScholarGPS® ID: 68746387166902

Affiliation
University of Texas at Dallas, Richardson, United States
Affiliation History

Field
Engineering and Computer Science
Discipline
Materials Science and Engineering
Top Specialties
Semiconductor | Electron Transport Chain | Mobilities | Monte Carlo Method | Nanostructure | Semiconductor Device | Electron Mobility | Silicon Dioxide | Dielectric | Nanowire | Electronic Band Structure | Field-effect Transistor | Silicon Nanowire | CMOS | Energy
Metrics Summary
Publication Count
280
Predicted Citations
18,016
Predicted h-index
68
Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

  • Publications
  • Books
  • Patents
  • NIH/NSF
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First-principles approach to closing the 10–100 eV gap for charge-carrier thermalization in semiconductors (journal article)
Nielsen, Dallin O. | Van de Walle, Chris G. | Pantelides, Sokrates T. | Schrimpf, Ronald D. | Fleetwood, Daniel M. | Fischetti, Massimo V.
Physical Review B, volume 108, issue 15 (2023).
10.1103/PhysRevB.108.155203
Cited by (4) | Cite | Source
Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation (journal article)
Gopalan, Sanjay | Mansoori, Shoaib | Van de Put, Maarten | Gaddemane, Gautam | Fischetti, Massimo
Journal of Computational Electronics, volume 22, issue 5, pages 1240-1256 (2023).
10.1007/s10825-023-02071-3
Cite | Source
Mobility Limitations in TMD Monolayers: The Influence of Impurities and Remote Phonons (conference)
Mansoori, Shoaib | Gopalan, Sanjay | Fischetti, Massimo
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2023)
Kobe, Japan
10.23919/SISPAD57422.2023.10319612
Cite | Source
The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials (journal article)
Brahma, Madhuchhanda | Van de Put, Maarten L. | Chen, Edward | Fischetti, Massimo V. | Vandenberghe, William G.
npj 2D Materials and Applications, volume 7, issue 1 (2023).
10.1038/s41699-023-00372-6
Cited by (5) | Cite | Source
Theoretical study of carrier transport in supported and gated two-dimensional transition metal dichalcogenides (journal article)
Gopalan, Sanjay | Van de Put, Maarten L. | Gaddemane, Gautam | Fischetti, Massimo V.
Solid-State Electronics, volume 200 (2023).
10.1016/j.sse.2022.108509
Cite | Source
Ab initio Methods for Electronic Transport in Semiconductors and Nanostructures (book chapter)
In Springer Handbook of Semiconductor Devices
Fischetti, Massimo V. | Vandenberghe, William G. | Put, Maarten L. Van de | Gaddemane, Gautam | Fang, Jingtian
Springer International Publishing (2023)
10.1007/978-3-030-79827-7_42
Cite | Source
Image-force barrier lowering in top- and side-contacted two-dimensional materials (journal article)
Deylgat, Emeric | Chen, Edward | Fischetti, Massimo V. | Sorée, Bart | Vandenberghe, William G.
Solid-State Electronics, volume 198 (2022).
10.1016/j.sse.2022.108458
Cited by (4) | Cite | Source
Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment (journal article)
Gopalan, Sanjay | Van de Put, Maarten L. | Gaddemane, Gautam | Fischetti, Massimo V.
Physical Review Applied, volume 18, issue 5 (2022).
10.1103/PhysRevApplied.18.054062
Cited by (9) | Cite | Source
The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors (journal article)
Pantelides, Sokrates T. | Walker, D. Greg | Reaz, Mahmud | Fischetti, Massimo V. | Schrimpf, Ronald D.
Applied Physics Letters, volume 121, issue 4 (2022).
10.1063/5.0088142
Cited by (2) | Cite | Source
Contacts to Two-dimensional Materials: Image Forces, Dielectric Environment, and Back-gate (conference)
Brahma, Madhuchhanda | Van de Put, Maarten L. | Chen, Edward | Fischetti, Massimo V. | Vandenberghe, William G.
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2022)
Hsinchu, Taiwan
10.1109/VLSI-TSA54299.2022.9770997
Cited by (1) | Cite | Source
FLASH Mechanisms Track (Oral Presentations) A FEASIBILITY STUDY OF IORT-FLASH USING A GPU-BASED FAST MONTE CARLO (journal article)
Franciosini, G. | Sarti, A. | Barone, S. | De Maria, P. | De Simoni, M. | Di Francesco, M. | Di Martino, F. | Felici, G. | Fischetti, M. | Galante, F. | ... | Trigilio, A.
Physica Medica, volume 94 (2022).
10.1016/S1120-1797(22)01515-0
Cite | Source
FRED: a fast Monte Carlo code on GPU for treatment planning software (journal article)
De Simoni, M. | De Maria, P. | Fischetti, M. | Franciosini, G. | Marafini, M. | Mirabelli, R. | Patera, V. | Salvati, F. | Sarti, A. | Schiavi, A. | ... | Traini, G.
Physica Medica, volume 92 (2021).
10.1016/S1120-1797(22)00323-4
Cite | Source
Investigating the use of HSE Hybrid Functionals to Improve Electron Transport Calculations in Si, Ge, Diamond, and SiC (conference)
Nielsen, Dallin | Put, Maarten Van de | Fischetti, Massimo
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2021)
Dallas, TX, USA
10.1109/SISPAD54002.2021.9592587
Cited by (1) | Cite | Source
Modeling Contact Resistivity in Monolayer Molybdenum disulfide Edge contacts (conference)
Brahma, Madhuchhanda | Van de Put, Maarten L. | Chen, Edward | Fischetti, Massimo V. | Vandenberghe, William G.
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2021)
Dallas, TX, USA
10.1109/SISPAD54002.2021.9592589
Cited by (2) | Cite | Source
3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs (journal article)
Reaz, Mahmud | Tonigan, Andrew M. | Li, Kan | Smith, M. Brandon | Rony, Mohammed W. | Gorchichko, Mariia | O'Hara, Andrew | Linten, Dimitri | Mitard, Jerome | Fang, Jingtian | ... | Schrimpf, Ronald D.
IEEE Transactions on Electron Devices, volume 68, issue 5, pages 2556-2563 (2021).
10.1109/TED.2021.3068328
Cited by (12) | Cite | Source
Theoretical Study of Electronic Transport in Two-Dimensional Materials (conference)
Fischetti, M. V. | Van de Put, M. L. | Gaddemane, G. | Chen, S. | Vandenberghe, W. G. | Gopalan, S.
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2021)
Hsinchu, Taiwan
10.1109/VLSI-TSA51926.2021.9440113
Cite | Source
Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides (journal article)
Gaddemane, Gautam | Gopalan, Sanjay | Van de Put, Maarten L. | Fischetti, Massimo V.
Journal of Computational Electronics, volume 20, issue 1, pages 49-59 (2021).
10.1007/s10825-020-01526-1
Cited by (26) | Cite | Source
Monte Carlo analysis of phosphorene nanotransistors (journal article)
Gaddemane, Gautam | Van de Put, Maarten L. | Vandenberghe, William G. | Chen, Edward | Fischetti, Massimo V.
Journal of Computational Electronics, volume 20, issue 1, pages 60-69 (2021).
10.1007/s10825-020-01610-6
Cited by (9) | Cite | Source
Quantum transport simulation of graphene-nanoribbon field-effect transistors with defects (journal article)
Chen, Shanmeng | Van de Put, Maarten L. | Fischetti, Massimo V.
Journal of Computational Electronics, volume 20, issue 1, pages 21-37 (2021).
10.1007/s10825-020-01588-1
Cited by (9) | Cite | Source
Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2 : Screening and Remote Phonon Scattering (conference)
Van de Put, Maarten L. | Gaddemane, Gautam | Gopalan, Sanjay | Fischetti, Massimo V.
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2020)
Kobe, Japan
10.23919/SISPAD49475.2020.9241676
Cited by (3) | Cite | Source