Chee Wee Liu

ScholarGPS® ID: 56526863994076

Affiliation
National Taiwan University, Taipei City, Taiwan
Affiliation History

Field
Engineering and Computer Science
Discipline
Electrical and Computer Engineering
Top Specialties
Semiconductor | Semiconductor Device | Mobilities | Electric Power | VLSI Technology | Quantum Dot | Solar Cell | Chemical Vapor Deposition | Manufacturing | Photodetector | Thin-film Transistor | Energy | Laser | Reliability (semiconductor) | Reliability Engineering
Metrics Summary
Publication Count
440
Predicted Citations
8,625
Predicted h-index
43
Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

  • Publications
  • Books
  • Patents
  • NIH/NSF
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Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/Hfx Zr1‐x O2 Interface and Evidence of Fatigue Mechanism (journal article)
Aich, Abhijit | Senapati, Asim | Lou, Zhao‐Feng | Chen, Yi‐Pin | Huang, Shih‐Yin | Maikap, Siddheswar | Lee, Min‐Hung | Liu, Chee Wee
Advanced Materials Interfaces (2024).
10.1002/admi.202400185
Cite | Source
Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5 Zr0.5 O2 by Optimizing TiN x Interfacial Capping Layer and Its Fatigue Mechanism (journal article)
Senapati, Asim | Lou, Zhao-Feng | Lee, Jia-Yang | Chen, Yi-Pin | Huang, Shih-Yin | Maikap, Siddheswar | Lee, Min-Hung | Liu, Chee-Wee
IEEE Electron Device Letters, volume 45, issue 4, pages 673-676 (2024).
10.1109/LED.2024.3368422
Cite | Source
Boost of orthorhombic population with amorphous SiO2 interfacial layer—a DFT study (journal article)
Chen, Yun-Wen | Liu, C W
Semiconductor Science and Technology, volume 37, issue 5, pages 05LT01- (2022).
10.1088/1361-6641/ac5a5e
Cited by (5) | Cite | Source
Engineering Hf0.5 Zr0.5 O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants (journal article)
Zhao, Zefu | Chen, Yu-Rui | Wang, Jer-Fu | Chen, Yun-Wen | Zou, Jia-Ren | Lin, Yuxuan | Xing, Yifan | Liu, C. W. | Hu, Chenming
IEEE Electron Device Letters, volume 43, issue 4, pages 553-556 (2022).
10.1109/LED.2022.3149309
Cited by (30) | Cite | Source
Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching (journal article)
Huang, Bo-Wei | Tsai, Chung-En | Liu, Yi-Chun | Tu, Chien-Te | Hsieh, Wan-Hsuan | Jan, Sun-Rong | Chen, Yu-Rui | Chueh, Shee-Jier | Cheng, Chun-Yi | Liu, C. W.
IEEE Transactions on Electron Devices, volume 69, issue 4, pages 2130-2136 (2022).
10.1109/TED.2022.3144105
Cited by (7) | Cite | Source
Electrical Measurements to Detect Liquid Concentration (journal article)
Yeh, Chun-Hung | Lee, Cheng-Tse | Chiu, Jih-Chao | Wu, Yi-Ting | Lin, Chih-Ting | Yu, Chwen | Chuang, Tzu-Sou | Liu, C. W.
IEEE Transactions on Semiconductor Manufacturing, volume 35, issue 1, pages 11-15 (2022).
10.1109/TSM.2021.3126128
Cite | Source
Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier (journal article)
Chiu, Jih-Chao | Li, Song-Ling | Lee, Ming-Xuan | Yen, Chia-Chun | Chen, Tsang-Long | Chou, Cheng-Hsu | Liu, C. W.
IEEE Journal of the Electron Devices Society, volume 10 (2022).
10.1109/JEDS.2021.3130211
Cited by (4) | Cite | Source
Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching (journal article)
Liu, Yi-Chun | Tu, Chien-Te | Tsai, Chung-En | Huang, Bo-Wei | Cheng, Chun-Yi | Chueh, Shee-Jier | Chen, Jyun-Yan | Liu, C. W.
IEEE Transactions on Electron Devices, volume 68, issue 12, pages 6599-6604 (2021).
10.1109/TED.2021.3110838
Cited by (10) | Cite | Source
Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching (journal article)
Tsou, Ya-Jui | Chen, Wei-Jen | Shih, Huan-Chi | Liu, Pang-Chun | Liu, C. W. | Li, Kai-Shin | Shieh, Jia-Min | Yen, Yu-Shen | Lai, Chih-Huang | Wei, Jeng-Hua | ... | Sun, Jack Yuan-Chen
IEEE Transactions on Electron Devices, volume 68, issue 12, pages 6623-6628 (2021).
10.1109/TED.2021.3110833
Cited by (5) | Cite | Source
Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure (journal article)
Chen, D. | Cai, S. | Hsu, N.-W. | Huang, S.-H. | Chuang, Y. | Nielsen, E. | Li, J.-Y. | Liu, C. W. | Lu, T. M. | Laroche, D.
Applied Physics Letters, volume 119, issue 22 (2021).
10.1063/5.0068538
Cite | Source
Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes (journal article)
Hsiang, Kuo-Yu | Liao, Chun-Yu | Wang, Jer-Fu | Lou, Zhao-Feng | Lin, Chen-Ying | Chiang, Shih-Hung | Liu, Chee-Wee | Hou, Tuo-Hung | Lee, Min-Hung
Nanomaterials, volume 11, issue 10, pages 2685- (2021).
10.3390/nano11102685
Cited by (5) | Cite | Source
Architecture and Optimization of 2T (Footprint) SRAM (journal article)
Chung, Chia-Che | Lin, Hsin-Cheng | Huang, Bo-Wei | Tsen, Chia-Jung | Liu, C. W.
IEEE Transactions on Electron Devices, volume 68, issue 10, pages 4918-4924 (2021).
10.1109/TED.2021.3107474
Cited by (4) | Cite | Source
RF Performance of Stacked Si Nanosheet nFETs (journal article)
Lin, Hsin-Cheng | Chou, Tao | Chung, Chia-Che | Tsen, Chia-Jung | Huang, Bo-Wei | Liu, C. W.
IEEE Transactions on Electron Devices, volume 68, issue 10, pages 5277-5283 (2021).
10.1109/TED.2021.3106287
Cited by (17) | Cite | Source
Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory (journal article)
Hsiang, K.-Y. | Liao, C.-Y. | Liu, J.-H. | Wang, J.-F. | Chiang, S.-H. | Chang, S.-H. | Hsieh, F.-C. | Liang, H. | Lin, C.-Y. | Lou, Z.-F. | ... | Lee, M. H.
IEEE Electron Device Letters, volume 42, issue 10, pages 1464-1467 (2021).
10.1109/LED.2021.3107940
Cited by (21) | Cite | Source
Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation (conference)
Chen, Wei-Jen | Tsou, Ya-Jui | Shih, Huan-Chi | Liu, Pang-Chun | Liu, C. W.
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (2021)
Dallas, TX, USA
10.1109/SISPAD54002.2021.9592529
Cited by (2) | Cite | Source
Double-Layer Amorphous InGaZnO Thin Film Transistors with High Mobility and High Reliability (conference)
Li, Song-Ling | Lee, Ming-Xuan | Yen, Chia-Chun | Chen, Tsang-Long | Chou, Cheng-Hsu | Liu, C. W.
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2021)
Hsinchu, Taiwan
10.1109/VLSI-TSA51926.2021.9440093
Cited by (1) | Cite | Source
Uniform 4-Stacked Ge0.9 Sn0.1 Nanosheets Using Double Ge0.95 Sn0.05 Caps by Highly Selective Isotropic Dry Etch (journal article)
Tu, Chien-Te | Huang, Yu-Shiang | Cheng, Chun-Yi | Tsai, Chung-En | Chen, Jyun-Yan | Ye, Hung-Yu | Lu, Fang-Liang | Liu, C. W.
IEEE Transactions on Electron Devices, volume 68, issue 4, pages 2071-2076 (2021).
10.1109/TED.2021.3050430
Cited by (15) | Cite | Source
Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system (journal article)
Dolgopolov, V. T. | Melnikov, M. Yu. | Shashkin, A. A. | Huang, S.-H. | Liu, C. W. | Kravchenko, S. V.
Physical Review B, volume 103, issue 16 (2021).
10.1103/PhysRevB.103.L161302
Cited by (3) | Cite | Source
Multi-channel field effect transistors using 2D-material (patent)
Chen, Pin-Shiang | Chang, Hung-Chih | Liu, Chee-Wee | Pan, Samuel C.
Patent Number: 10879404 (2020)
Cite | Source
Laser anneal process (patent)
Lu, Chun-Ti | Lee, Meng-Chin | Lu, Fang-Liang | Liu, Chee-Wee
Patent Number: 10867809 (2020)
Cite | Source