Damir Borovac

ScholarGPS™ ID: 49244566564448

Affiliation

Osram Opto Semiconductors GmbH

Affiliation History

Field

Engineering and Computer Science

Discipline

Electrical and Computer Engineering

Top Specialties

Photonics | Semiconductor | Laser | Crystal Growth

Metrics Summary

Publication Count

Predicted Citations

174

Predicted h-index

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF


Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission (journal article) Fragkos, Ioannis E. \| Sun, Wei \| Borovac, Damir \| Song, Renbo \| Wierer, Jonathan J. \| Tansu, Nelson IEEE Journal of Quantum Electronics, volume 58, issue 2, pages 1-6 (2022). 10.1109/JQE.2022.3142270 Cited by (1) \| Cite \| Source
Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters (journal article) Sun, Wei \| Fu, Hanlin \| Borovac, Damir \| Goodrich, Justin C. \| Tan, Chee-Keong \| Tansu, Nelson IEEE Journal of Quantum Electronics, volume 58, issue 2, pages 1-6 (2022). 10.1109/JQE.2022.3143573 Cited by (1) \| Cite \| Source
Recombination Rates of Inx Ga1−x N/Aly Ga1−y N/GaN Multiple Quantum Wells Emitting From 640 to 565 nm (journal article) Muyeed, Syed Ahmed Al \| Borovac, Damir \| Xue, Haotian \| Wei, Xiongliang \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. IEEE Journal of Quantum Electronics, volume 57, issue 6, pages 1-7 (2021). 10.1109/JQE.2021.3111402 Cited by (2) \| Cite \| Source
Gain Properties of Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers (conference) Fu, Hanlin \| Sun, Wei \| Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson 2021 IEEE Photonics Conference (IPC) (2021) Vancouver, BC, Canada 10.1109/IPC48725.2021.9592870 Cite \| Source
Dilute-As InGaNAs quantum wells for red-emitting laser active regions (conference) Fu, Hanlin \| Sun, Wei \| Goodrich, Justin C. \| Borovac, Damir \| Tansu, Nelson Novel In-Plane Semiconductor Lasers XX (2021) Online Only, United States 10.1117/12.2578751 Cite \| Source
Self-assembled growth of size-controlled InGaN quantum dots for LEDs (conference) Wierer, Jonathan J. \| Muyeed, Syed Ahmed Al \| Wei, Xiongliang \| Borovac, Damir \| Xue, Haotian \| Song, Renbo \| Tansu, Nelson Light-Emitting Devices, Materials, and Applications XXV (2021) Online Only, United States 10.1117/12.2585038 Cite \| Source
Efficient hole-doping in dilute-anion III-nitrides (conference) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson Gallium Nitride Materials and Devices XVI (2021) Online Only, United States 10.1117/12.2578892 Cite \| Source
GaN biosensor design with localized surface plasmon resonance (conference) Henderson, Zane D. \| Borovac, Damir \| Sammarco, Cono \| Liu, Xiaoli \| Tan, Chee-Keong Physics and Simulation of Optoelectronic Devices XXIX (2021) Online Only, United States 10.1117/12.2578652 Cited by (1) \| Cite \| Source
Prospects for hole doping in dilute-anion III-nitrides (journal article) Goodrich, Justin C. \| Tan, Chee-Keong \| Borovac, Damir \| Tansu, Nelson Applied Physics Letters, volume 118, issue 7 (2021). 10.1063/5.0042316 Cited by (1) \| Cite \| Source
Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy (journal article) Borovac, Damir \| Sun, Wei \| Peart, Matthew R. \| Song, Renbo \| Wierer, Jonathan J. \| Tansu, Nelson Journal of Crystal Growth, volume 548 (2020). 10.1016/j.jcrysgro.2020.125847 Cited by (6) \| Cite \| Source
p-type Doping of Dilute-Anion III-Nitride Materials (conference) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson 2020 IEEE Photonics Conference (IPC) (2020) Vancouver, BC, Canada 10.1109/IPC47351.2020.9252377 Cite \| Source
Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates (journal article) Al Muyeed, Syed Ahmed \| Wei, Xiongliang \| Borovac, Damir \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Journal of Crystal Growth, volume 540 (2020). 10.1016/j.jcrysgro.2020.125652 Cited by (3) \| Cite \| Source
Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation) (conference) Goodrich, Justin \| Fu, Hanlin \| Borovac, Damir \| Tansu, Nelson Gallium Nitride Materials and Devices XV (2020) San Francisco, United States 10.1117/12.2548752 Cite \| Source
InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation) (conference) Fu, Hanlin \| Borovac, Damir \| Goodrich, Justin \| Ogidi-Ekoko, Onoriode \| Tansu, Nelson Novel In-Plane Semiconductor Lasers XIX (2020) San Francisco, United States 10.1117/12.2548652 Cite \| Source
On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE (journal article) Borovac, Damir \| Sun, Wei \| Song, Renbo \| Wierer, Jonathan J. \| Tansu, Nelson Journal of Crystal Growth, volume 533 (2020). 10.1016/j.jcrysgro.2019.125469 Cited by (8) \| Cite \| Source
Electronic properties of dilute-As InGaNAs alloys: A first-principles study (journal article) Borovac, Damir \| Sun, Wei \| Tan, Chee-Keong \| Tansu, Nelson Journal of Applied Physics, volume 127, issue 1 (2020). 10.1063/1.5119371 Cited by (2) \| Cite \| Source
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers (journal article) Al Muyeed, Syed Ahmed \| Sun, Wei \| Peart, Matthew R. \| Lentz, Rebecca M. \| Wei, Xiongliang \| Borovac, Damir \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Journal of Applied Physics, volume 126, issue 21 (2019). 10.1063/1.5126965 Cited by (12) \| Cite \| Source
Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys (conference) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson 2019 IEEE Photonics Conference (IPC) (2019) San Antonio, TX, USA 10.1109/IPCon.2019.8908412 Cite \| Source
Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices (journal article) Peart, Matthew R. \| Wei, Xiongliang \| Borovac, Damir \| Sun, Wei \| Tansu, Nelson \| Wierer, Jonathan J. ACS Applied Electronic Materials, volume 1, issue 8, pages 1367-1371 (2019). 10.1021/acsaelm.9b00266 Cited by (8) \| Cite \| Source
Band Anti-Crossing Model in Dilute-As GaNAs Alloys (journal article) Goodrich, Justin C. \| Borovac, Damir \| Tan, Chee-Keong \| Tansu, Nelson Scientific Reports, volume 9, issue 1 (2019). 10.1038/s41598-019-41286-y Cited by (9) \| Cite \| Source