Jonathan J. Wierer

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Decline


	Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission (journal article) Fragkos, Ioannis E. \| Sun, Wei \| Borovac, Damir \| Song, Renbo \| Wierer, Jonathan J. \| Tansu, Nelson IEEE Journal of Quantum Electronics, volume 58, issue 2, pages 1-6 (2022). 10.1109/JQE.2022.3142270 Cite \| Source
	Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates (journal article) Wei, Xiongliang \| Al Muyeed, Syed Ahmed \| Xue, Haotian \| Palmese, Elia \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Photonics Research, volume 10, issue 1, pages 33- (2022). 10.1364/PRJ.441122 Cited by (2) \| Cite \| Source
	Recombination Rates of Inx Ga1−x N/Aly Ga1−y N/GaN Multiple Quantum Wells Emitting From 640 to 565 nm (journal article) Muyeed, Syed Ahmed Al \| Borovac, Damir \| Xue, Haotian \| Wei, Xiongliang \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. IEEE Journal of Quantum Electronics, volume 57, issue 6, pages 1-7 (2021). 10.1109/JQE.2021.3111402 Cited by (1) \| Cite \| Source
	Self-assembled growth of size-controlled InGaN quantum dots for LEDs (conference) Wierer, Jonathan J. \| Muyeed, Syed Ahmed Al \| Wei, Xiongliang \| Borovac, Damir \| Xue, Haotian \| Song, Renbo \| Tansu, Nelson Light-Emitting Devices, Materials, and Applications XXV (2021) Online Only, United States 10.1117/12.2585038 Cite \| Source
	Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy (journal article) Borovac, Damir \| Sun, Wei \| Peart, Matthew R. \| Song, Renbo \| Wierer, Jonathan J. \| Tansu, Nelson Journal of Crystal Growth, volume 548 (2020). 10.1016/j.jcrysgro.2020.125847 Cited by (3) \| Cite \| Source
	Electrical properties of MgO/GaN metal-oxide-semiconductor structures (journal article) Ogidi-Ekoko, Onoriode N. \| Goodrich, Justin C. \| Howzen, Alexandra J. \| Peart, Matthew R. \| Strandwitz, Nicholas C. \| Wierer, Jonathan J. \| Tansu, Nelson Solid-State Electronics, volume 172 (2020). 10.1016/j.sse.2020.107881 Cited by (5) \| Cite \| Source
	AlInN/GaN diodes for power electronic devices (journal article) Peart, Matthew R. \| Borovac, Damir \| Sun, Wei \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Applied Physics Express, volume 13, issue 9, pages 091006- (2020). 10.35848/1882-0786/abb180 Cited by (1) \| Cite \| Source
	Semiconductor light emitting device with light extraction structures (patent) Wierer, Jonathan J. \| David, Aurelien Jean Francois \| Choy, Henry Kwong-Hin Patent Number: 10734553 (2020) Cite \| Source
	Light emitting device including porous semiconductor (patent) Wierer, Jonathan J. \| Epler, John E. Patent Number: 10672949 (2020) Cite \| Source
	Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates (journal article) Al Muyeed, Syed Ahmed \| Wei, Xiongliang \| Borovac, Damir \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Journal of Crystal Growth, volume 540 (2020). 10.1016/j.jcrysgro.2020.125652 Cited by (2) \| Cite \| Source
	Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition (journal article) Goodrich, Justin C. \| Farinha, Thomas G. \| Ju, Ling \| Howzen, Alexandra J. \| Kundu, Animesh \| Ogidi-Ekoko, Onoriode N. \| Wierer, Jonathan J. \| Tansu, Nelson \| Strandwitz, Nicholas C. Journal of Crystal Growth, volume 536 (2020). 10.1016/j.jcrysgro.2020.125568 Cited by (5) \| Cite \| Source
	On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE (journal article) Borovac, Damir \| Sun, Wei \| Song, Renbo \| Wierer, Jonathan J. \| Tansu, Nelson Journal of Crystal Growth, volume 533 (2020). 10.1016/j.jcrysgro.2019.125469 Cited by (4) \| Cite \| Source
	Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering (journal article) Peart, Matthew R. \| Wierer, Jonathan J. IEEE Transactions on Electron Devices, volume 67, issue 2, pages 571-575 (2020). 10.1109/TED.2019.2958485 Cite \| Source
	Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers (journal article) Al Muyeed, Syed Ahmed \| Sun, Wei \| Peart, Matthew R. \| Lentz, Rebecca M. \| Wei, Xiongliang \| Borovac, Damir \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Journal of Applied Physics, volume 126, issue 21 (2019). 10.1063/1.5126965 Cited by (9) \| Cite \| Source
	III‐Nitride Micro‐LEDs for Efficient Emissive Displays (journal article) Wierer, Jonathan J. \| Tansu, Nelson Laser & Photonics Reviews, volume 13, issue 9, pages 1900141- (2019). 10.1002/lpor.201900141 Cited by (60) \| Cite \| Source
	Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices (journal article) Peart, Matthew R. \| Wei, Xiongliang \| Borovac, Damir \| Sun, Wei \| Tansu, Nelson \| Wierer, Jonathan J. ACS Applied Electronic Materials, volume 1, issue 8, pages 1367-1371 (2019). 10.1021/acsaelm.9b00266 Cited by (6) \| Cite \| Source
	Semiconductor light emitting device with light extraction structures (patent) Wierer, Jonathan J. \| David, Aurelien Jean Francois \| Choy, Henry Kwong-Hin Patent Number: 10164155 (2018) Cited by (1) \| Cite \| Source
	III-nitride light emitting device including porous semiconductor (patent) Wierer, Jonathan J. \| Epler, John E. Patent Number: 10090435 (2018) Cite \| Source
	AlInN for Vertical Power Electronic Devices (journal article) Peart, Matthew R. \| Tansu, Nelson \| Wierer, Jonathan J. IEEE Transactions on Electron Devices, volume 65, issue 10, pages 4276-4281 (2018). 10.1109/TED.2018.2866980 Cited by (8) \| Cite \| Source
	Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching (journal article) Wei, Xiongliang \| Al Muyeed, Syed Ahmed \| Peart, Matthew R. \| Sun, Wei \| Tansu, Nelson \| Wierer, Jonathan J. Applied Physics Letters, volume 113, issue 12 (2018). 10.1063/1.5046857 Cited by (6) \| Cite \| Source

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