Anushka Bansal

ScholarGPS® ID: 36400078842416

Affiliation

Pennsylvania State University, University Park, United States

Affiliation History

Field

Engineering and Computer Science

Discipline

Materials Science and Engineering

Top Specialties

Chemical Vapor Deposition | Epitaxy | Graphene Quantum Dot

Metrics Summary

Publication Count

Predicted Citations

999

Predicted h-index

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF

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Comparison of physical and chemical vapor deposition for magnesium intercalation underneath epitaxial graphene (journal article) Rondomanski, Patrick A. \| Bansal, Anushka \| Dong, Chengye \| Wang, Ke \| Gray, Jennifer L. \| Shallenberger, Jeffrey R. \| Robinson, Joshua A. \| Li, Qi \| Redwing, Joan M. Journal of Crystal Growth, volume 627 (2024). 10.1016/j.jcrysgro.2023.127521 Cited by (1) \| Cite \| Source
MOCVD Growth of Tungsten Ditelluride Thin Films (journal article) Mc Knight, Thomas V. \| Choudhury, Tanushree H. \| Wang, Ke \| Bansal, Anushka \| Redwing, Joan M. Journal of Crystal Growth, volume 625 (2024). 10.1016/j.jcrysgro.2023.127436 Cite \| Source
Toward a Mechanistic Understanding of the Formation of 2D-GaN x in Epitaxial Graphene (journal article) Bansal, Anushka \| Nayir, Nadire \| Wang, Ke \| Rondomanski, Patrick \| Subramanian, Shruti \| Kumari, Shalini \| Robinson, Joshua A. \| van Duin, Adri C. T. \| Redwing, Joan M. ACS Nano, volume 17, issue 1, pages 230-239 (2023). 10.1021/acsnano.2c07091 Cited by (4) \| Cite \| Source
Scalable synthesis of 2D materials (book chapter) In 2D Materials for Electronics, Sensors and Devices Choudhury, Tanushree H. \| Huet, Benjamin \| Zhang, Xiaotian \| Bansal, Anushka \| Redwing, Joan M. Elsevier (2023) 10.1016/B978-0-12-821505-0.00003-4 Cited by (1) \| Cite \| Source
Atomic-scale probing of defect-assisted Ga intercalation through graphene using ReaxFF molecular dynamics simulations (journal article) Nayir, Nadire \| Sengul, Mert Y. \| Costine, Anna L. \| Reinke, Petra \| Rajabpour, Siavash \| Bansal, Anushka \| Kozhakhmetov, Azimkhan \| Robinson, Joshua \| Redwing, Joan M. \| van Duin, Adri Carbon, volume 190 (2022). 10.1016/j.carbon.2022.01.005 Cited by (10) \| Cite \| Source
Gas source chemical vapor deposition of hexagonal boron nitride on C-plane sapphire using B2H6 and NH3 (journal article) Bansal, Anushka \| Zhang, Xiaotian \| Redwing, Joan M. Journal of Materials Research, volume 36, issue 23, pages 4678-4687 (2021). 10.1557/s43578-021-00446-5 Cited by (8) \| Cite \| Source
Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire (journal article) Bansal, Anushka \| Hilse, Maria \| Huet, Benjamin \| Wang, Ke \| Kozhakhmetov, Azimkhan \| Kim, Ji Hyun \| Bachu, Saiphaneendra \| Alem, Nasim \| Collazo, Ramon \| Robinson, Joshua A. \| ... \| Redwing, Joan M. ACS Applied Materials & Interfaces, volume 13, issue 45, pages 54516-54526 (2021). 10.1021/acsami.1c14591 Cited by (20) \| Cite \| Source
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire (journal article) Chubarov, Mikhail \| Choudhury, Tanushree H. \| Hickey, Danielle Reifsnyder \| Bachu, Saiphaneendra \| Zhang, Tianyi \| Sebastian, Amritanand \| Bansal, Anushka \| Zhu, Haoyue \| Trainor, Nicholas \| Das, Saptarshi \| ... \| Redwing, Joan M. ACS Nano, volume 15, issue 2, pages 2532-2541 (2021). 10.1021/acsnano.0c06750 Cited by (165) \| Cite \| Source
Atomic-Scale Probing of Defect-Assisted Ga Intercalation Through Graphene Using ReaxFF Molecular Dynamics Simulations (journal article) Nayir, Nadire \| Sengul, Mert Y. \| Costine, Anna L. \| Reinke, Petra \| Rajabpour, Siavash \| Bansal, Anushka \| Kozhakhmetov, Azimkhan \| Robinson, Joshua \| Redwing, Joan M. \| Duin, Adri van SSRN Electronic Journal (2021). 10.2139/ssrn.3962876 Cite \| Source
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide (journal article) Kozhakhmetov, Azimkhan \| Schuler, Bruno \| Tan, Anne Marie Z. \| Cochrane, Katherine A. \| Nasr, Joseph R. \| El‐Sherif, Hesham \| Bansal, Anushka \| Vera, Alex \| Bojan, Vincent \| Redwing, Joan M. \| ... \| Robinson, Joshua A. Advanced Materials, volume 32, issue 50 (2020). 10.1002/adma.202005159 Cited by (36) \| Cite \| Source
Cathodoluminescence spatially resolves optical transitions in thick group-III and N-polar InGaN films (journal article) Bansal, Anushka \| Redwing, Joan M. \| Al Balushi, Zakaria Y. Journal of Applied Physics, volume 128, issue 17 (2020). 10.1063/5.0025361 Cite \| Source
Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition (journal article) Zhang, Xiaotian \| Lee, Sora \| Bansal, Anushka \| Zhang, Fu \| Terrones, Mauricio \| Jackson, Thomas N. \| Redwing, Joan M. Journal of Crystal Growth, volume 533 (2020). 10.1016/j.jcrysgro.2019.125471 Cited by (27) \| Cite \| Source
Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor (journal article) Lundh, James Spencer \| Chatterjee, Bikramjit \| Song, Yiwen \| Baca, Albert G. \| Kaplar, Robert J. \| Beechem, Thomas E. \| Allerman, Andrew A. \| Armstrong, Andrew M. \| Klein, Brianna A. \| Bansal, Anushka \| ... \| Choi, Sukwon Applied Physics Letters, volume 115, issue 15 (2019). 10.1063/1.5115013 Cited by (32) \| Cite \| Source
(Invited) The Role of Defects in Van Der Waals Epitaxy of Transition Metal Dichalcogenides (journal article) Zhang, Xiaotian \| Choudhury, Tanushree \| Chubarov, Mikhail \| Bansal, Anushka \| Redwing, Joan M. ECS Meeting Abstracts, volume MA2019-01, issue 12, pages 836-836 (2019). 10.1149/MA2019-01/12/836 Cite \| Source
GaN Heteroepitaxy on Strain-Engineered (111) Si/Si1−xGex (journal article) Bansal, Anushka \| Martin, Nathan C. \| Wang, Ke \| Redwing, Joan M. Journal of Electronic Materials, volume 48, issue 5, pages 3355-3362 (2019). 10.1007/s11664-019-07031-x Cited by (1) \| Cite \| Source
Effect of Ge doping on growth stress and conductivity in AlxGa1-xN (journal article) Bansal, Anushka \| Wang, Ke \| Lundh, James Spencer \| Choi, Sukwon \| Redwing, Joan M. Applied Physics Letters, volume 114, issue 14 (2019). 10.1063/1.5080680 Cited by (13) \| Cite \| Source
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers (journal article) Zhang, Xiaotian \| Zhang, Fu \| Wang, Yuanxi \| Schulman, Daniel S. \| Zhang, Tianyi \| Bansal, Anushka \| Alem, Nasim \| Das, Saptarshi \| Crespi, Vincent H. \| Terrones, Mauricio \| Redwing, Joan M. ACS Nano, volume 13, issue 3, pages 3341-3352 (2019). 10.1021/acsnano.8b09230 Cited by (111) \| Cite \| Source
Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization (Phys. Status Solidi RRL 3/2018) (journal article) Hainey, Mel F. \| Al Balushi, Zakaria Y. \| Wang, Ke \| Martin, Nathan C. \| Bansal, Anushka \| Chubarov, Mikhail \| Redwing, Joan M. physica status solidi (RRL) – Rapid Research Letters, volume 12, issue 3 (2018). 10.1002/pssr.201870311 Cite \| Source \| Open Access
Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization (journal article) Hainey, Mel F. \| Al Balushi, Zakaria Y. \| Wang, Ke \| Martin, Nathan C. \| Bansal, Anushka \| Chubarov, Mikhail \| Redwing, Joan M. physica status solidi (RRL) – Rapid Research Letters, volume 12, issue 3 (2018). 10.1002/pssr.201700392 Cited by (4) \| Cite \| Source
Advanced methodology for measuring the extensive elastic compliance and mechanical loss directly in k31 mode piezoelectric ceramic plates (journal article) Majzoubi, Maryam \| Shekhani, Husain N. \| Bansal, Anushka \| Hennig, Eberhard \| Scholehwar, Timo \| Uchino, Kenji Journal of Applied Physics, volume 120, issue 22 (2016). 10.1063/1.4971340 Cited by (13) \| Cite \| Source