Simon M. Sze | Scholar Profiles and Rankings

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Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering (journal article) Zhou, Kuan-Ju \| Chang, Ting-Chang \| Yen, Po-Yu \| Chen, Yu-An \| Chien, Ya-Ting \| Huang, Bo-Shen \| Lee, Po-Yi \| Juan, Tzu-Hsuan \| Sze, Simon M. \| Fan, Yang-Shun \| ... \| Tsai, Chih-Hung IEEE Electron Device Letters, volume 45, issue 4, pages 593-596 (2024). 10.1109/LED.2024.3363131 Cite \| Source
The Transition of Threshold Voltage Shift of Al2 O3 /Si3 N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC (journal article) Lee, Ya-Huan \| Chang, Kai-Chun \| Tai, Mao-Chou \| Wang, Yu-Xuan \| Lin, Hsin-Ni \| Yeh, Yu-Hsuan \| Kuo, Hung-Ming \| Tsai, Xin-Ying \| Lee, Jason \| Huang, I-Yu \| ... \| Sze, Simon IEEE Transactions on Electron Devices, volume 71, issue 3, pages 1792-1797 (2024). 10.1109/TED.2024.3351094 Cited by (1) \| Cite \| Source
Impact of deposition temperature on electrical properties of HZO-based FeRAM (journal article) Yeh, Yu-Hsuan \| Tan, Yung-Fang \| Huang, Yen-Che \| Lin, Chao Cheng \| Wu, Chung-Wei \| Zhang, Yong-Ci \| Lee, Ya-Huan \| Chang, Ting-Chang \| Sze, Simon M. Journal of Applied Physics, volume 135, issue 6 (2024). 10.1063/5.0184841 Cite \| Source
Phase transformation on HZO ferroelectric layer in ferroelectric random-access memory induced by x-ray irradiation (journal article) Wu, Chung-Wei \| Chen, Po-Hsun \| Chang, Ting-Chang \| Tan, Yung-Fang \| Lin, Shih-Kai \| Yeh, Yu-Hsuan \| Zhang, Yong-Ci \| Lin, Hsin-Ni \| Chang, Kai-Chun \| Yeh, Chien-Hung \| Sze, Simon Semiconductor Science and Technology, volume 39, issue 2, pages 025002- (2024). 10.1088/1361-6641/ad1130 Cite \| Source
Utilizing high pressure hydrogen annealing to realize forming free CBRAM (journal article) Tan, Yung-Fang \| Chen, Min-Chen \| Yeh, Yu-Hsuan \| Wu, Chung-Wei \| Tsai, Tsung-Ming \| Chang, Ting-Chang \| Chou, Sheng-Yao \| Huang, Yen-Che \| Sze, Simon M. Materials Science and Engineering: B, volume 296 (2023). 10.1016/j.mseb.2023.116619 Cited by (1) \| Cite \| Source
Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting (journal article) Yeh, Yu-Hsuan \| Chen, Wen-Chung \| Chang, Ting-Chang \| Tan, Yung-Fang \| Wu, Chung-Wei \| Zhang, Yong-Ci \| Lee, Ya-Huan \| Lin, Chao Cheng \| Huang, Hui-Chun \| Sze, Simon M Semiconductor Science and Technology, volume 38, issue 8, pages 085004- (2023). 10.1088/1361-6641/acde9f Cited by (1) \| Cite \| Source
Abnormal on Current Tendency in Saturation Region Between High and Light Carbon Doped Buffer Layer in p-GaN HEMT (journal article) Yeh, Chien-Hung \| Chen, Po-Hsun \| Chang, Ting-Chang \| Chang, Kai-Chun \| Wang, Yu-Xuan \| Kuo, Ting-Tzu \| Zhang, Yong-Ci \| Lin, Jia-Hong \| Lee, Ya-Huan \| Kuo, Hung-Ming \| ... \| Sze, Simon M. IEEE Electron Device Letters, volume 44, issue 7, pages 1164-1167 (2023). 10.1109/LED.2023.3279375 Cited by (3) \| Cite \| Source
Investigation of Threshold Voltage and Drain Current Degradations in Si3 N4 /AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation (journal article) Kuo, Hung-Ming \| Chang, Ting-Chang \| Chang, Kai-Chun \| Lin, Hsin-Ni \| Kuo, Ting-Tzu \| Yeh, Chien-Hung \| Lee, Ya-Huan \| Lin, Jia-Hong \| Tsai, Xin-Ying \| Huang, Jen-Wei \| Sze, Simon IEEE Transactions on Electron Devices, volume 70, issue 5, pages 2216-2221 (2023). 10.1109/TED.2023.3255829 Cited by (3) \| Cite \| Source
Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors (journal article) Tan, Yung‐Fang \| Chang, Kai‐Chun \| Tsai, Tsung‐Ming \| Chang, Ting‐Chang \| Chen, Wen‐Chung \| Yeh, Yu‐Hsuan \| Wu, Chung‐Wei \| Lin, Chao‐Cheng \| Sze, Simon M. Advanced Electronic Materials, volume 9, issue 4 (2023). 10.1002/aelm.202201137 Cited by (3) \| Cite \| Source
An Extended Method to Analyze Boron Diffusion Defects in 16 nm Node High-Voltage FinFETs (conference) Kuo, Ting-Tzu \| Chen, Ying-Chung \| Chang, Ting-Chang \| Ciou, Fong-Min \| Yeh, Chien-Hung \| Chen, Po-Hsun \| Sze, Simon M 2023 35th International Conference on Microelectronic Test Structure (ICMTS) (2023) Tokyo, Japan 10.1109/ICMTS55420.2023.10094125 Cite \| Source
Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation (conference) Wu, Pei-Yu \| Tsai, Xin-Ying \| Chang, Ting-Chang \| Tsai, Tsung-Ming \| Sze, Simon M. 2023 35th International Conference on Microelectronic Test Structure (ICMTS) (2023) Tokyo, Japan 10.1109/ICMTS55420.2023.10094072 Cite \| Source
Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress (journal article) Zhou, Kuan-Ju \| Chang, Ting-Chang \| Tai, Mao-Chou \| Chen, Yu-An \| Chien, Ya-Ting \| Sun, Pei-Jun \| Yen, Po-Yu \| Sze, Simon M. \| Fan, Yang-Shun \| Huang, Chen-Shuo \| ... \| Tsai, Chih-Hung ACS Applied Electronic Materials, volume 5, issue 2, pages 1183-1188 (2023). 10.1021/acsaelm.2c01629 Cited by (2) \| Cite \| Source
Interfacial variation in HfO2 -based resistive switching devices with titanium electrodes under asymmetric bias operation (journal article) Zhou, Kuan-Ju \| Chen, Min-Chen \| Chang, Ting-Chang \| Lin, Shih-Kai \| Wang, Yu-Bo \| Zhang, Yong-Ci \| Yen, Po-Yu \| Shao, Kui-You \| Huang, Hui-Chun \| Huang, Jen-Wei \| Sze, Simon M Journal of Physics D: Applied Physics, volume 56, issue 6, pages 065101- (2023). 10.1088/1361-6463/acaf09 Cite \| Source
Forming-Free HfO2 -Based Resistive Random Access Memory by X-Ray Irradiation (journal article) Wang, Yu-Bo \| Chang, Ting-Chang \| Lin, Shih-Kai \| Wu, Pei-Yu \| Zhang, Yong-Ci \| Tan, Yung-Fang \| Chen, Wen-Chung \| Wu, Chung-Wei \| Chou, Sheng-Yao \| Zhou, Kuan-Ju \| ... \| Sze, Simon M. IEEE Transactions on Electron Devices, volume 69, issue 12, pages 6705-6709 (2022). 10.1109/TED.2022.3215932 Cited by (2) \| Cite \| Source
A Stacked p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor for Future Display Applications (journal article) Wang, Yu‐Xuan \| Tai, Mao‐Chou \| Chang, Ting‐Chang \| Wu, Chia‐Chuan \| Zheng, Yu‐Zhe \| Tu, Yu‐Fa \| Zhou, Kuan‐Ju \| Shih, Yu‐Shan \| Chen, Yu‐An \| Huang, Jen‐Wei \| Sze, Simon Advanced Materials Technologies, volume 7, issue 12 (2022). 10.1002/admt.202200394 Cited by (1) \| Cite \| Source
Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory (journal article) Hsu, Chih-Chieh \| Liu, Po-Tsun \| Gan, Kai-Jhih \| Ruan, Dun-Bao \| Sze, Simon M. Vacuum, volume 201 (2022). 10.1016/j.vacuum.2022.111123 Cited by (2) \| Cite \| Source
Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions (journal article) Zhou, Kuan-Ju \| Chen, Po-Hsun \| Zheng, Yu-Zhe \| Tai, Mao-Chou \| Wang, Yu-Xuan \| Chien, Ya-Ting \| Sun, Pei-Jun \| Huang, Hui-Chun \| Chang, Ting-Chang \| Sze, Simon M. Journal of Materials Chemistry C, volume 10, issue 24, pages 9192-9197 (2022). 10.1039/D2TC01460B Cited by (8) \| Cite \| Source
A Method to Measure Polarization Signal of Nanoscale One-Transistor-One-Capacitor Ferroelectric Memory (journal article) Chang, Kai-Chun \| Chen, Po-Hsun \| Chang, Ting-Chang \| Tan, Yung-Fang \| Chen, Wen-Chung \| Yeh, Chien-Hung \| Ciou, Fong-Min \| Tai, Mao-Chou \| Tsai, Tsung-Ming \| Sze, Simon IEEE Electron Device Letters, volume 43, issue 6, pages 862-865 (2022). 10.1109/LED.2022.3166180 Cite \| Source
Use of a supercritical fluid treatment to improve switching region in resistive random access memory (journal article) Lin, Shih-Kai \| Chen, Min-Chen \| Chang, Ting-Chang \| Lien, Chen-Hsin \| Wu, Cheng-Hsien \| Lin, Yu-Shuo \| Wu, Pei-Yu \| Tan, Yung-Fang \| Huang, Wei-Chen \| Zhang, Yong-Ci \| ... \| Sze, Simon M. Applied Physics Express, volume 15, issue 6, pages 064006- (2022). 10.35848/1882-0786/ac7031 Cited by (1) \| Cite \| Source
Radiation hardness of InWZnO thin film as resistive switching layer (journal article) Hsu, Chih-Chieh \| Ruan, Dun-Bao \| Liao, Kuei-Shu Chang \| Gan, Kai-Jhih \| Sze, Simon M. \| Liu, Po-Tsun Applied Physics Letters, volume 120, issue 19 (2022). 10.1063/5.0094281 Cited by (3) \| Cite \| Source