Gregory S. Snider
ScholarGPS® ID: 32204472115263
Affiliation History
Discipline
Electrical and Computer Engineering
Top Specialties
Logic | Nanoscopic Scale | Nanowire | Memristor | Nanotechnology | Cellular Automaton | Integrated Circuit | Nanoelectronics | Logic Gate | Programmable Logic Device | CMOS | Electronic Circuit | Gate Array | Graphics
Metrics Summary
Publication Count
140
Predicted Citations
23,868
Predicted h-index
43
Ranking
Publications and Citation History
Publications based on Top Specialties
Types of Publication
- Publications
- Books
- Patents
- NIH/NSF
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Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition (journal article) Applied Sciences, volume 7, issue 3, pages 246- (2017). |
Transistor Switches Using Active Piezoelectric Gate Barriers (journal article) IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, volume 1 (2015). |
2014 IEEE International Electron Devices Meeting (IEDM) (2014) San Francisco, CA, USA |
Patent Number: 8812418 (2014) |
(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects (journal article) ECS Transactions, volume 64, issue 6, pages 581-595 (2014). |
2014 72nd Annual Device Research Conference (DRC) (2014) Santa Barbara, CA, USA |
Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor (journal article) Journal of Applied Physics, volume 115, issue 7 (2014). |
Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz (journal article) Japanese Journal of Applied Physics, volume 52, issue 8S, pages 08JN14- (2013). |
Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz (journal article) IEEE Electron Device Letters, volume 34, issue 3, pages 378-380 (2013). |
Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs (journal article) Solid-State Electronics, volume 80 (2013). |
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT / fmax of 260/220 GHz (journal article) Applied Physics Express, volume 6, issue 1, pages 016503- (2013). |
Patent Number: 8332340 (2012) |
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz (journal article) IEEE Electron Device Letters, volume 33, issue 7, pages 988-990 (2012). |