Fei Xue

ScholarGPS® ID: 27857337091118

Affiliation

University of Texas at Austin, Austin, United States

Affiliation History

Field

Physical Sciences and Mathematics

Discipline

Physics

Top Specialties

Metrics Summary

Publication Count

Predicted Citations

1,585

Predicted h-index

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF

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Higgs-like modes in two-dimensional spatially indirect exciton condensates (journal article) Xue, Fei \| Wu, Fengcheng \| MacDonald, A. H. Physical Review B, volume 102, issue 7 (2020). 10.1103/PhysRevB.102.075136 Cited by (4) \| Cite \| Source
Observation of Rydberg exciton polaritons and their condensate in a perovskite cavity (journal article) Bao, Wei \| Liu, Xiaoze \| Xue, Fei \| Zheng, Fan \| Tao, Renjie \| Wang, Siqi \| Xia, Yang \| Zhao, Mervin \| Kim, Jeongmin \| Yang, Sui \| ... \| Zhang, Xiang Proceedings of the National Academy of Sciences, volume 116, issue 41, pages 20274-20279 (2019). 10.1073/pnas.1909948116 Cited by (53) \| Cite \| Source
Resistive switching characteristics and mechanisms in silicon oxide memory devices (journal article) Chang, Yao-Feng \| Fowler, Burt \| Chen, Ying-Chen \| Zhou, Fei \| Wu, Xiaohan \| Chen, Yen-Ting \| Wang, Yanzhen \| Xue, Fei \| Lee, Jack C. Physical Sciences Reviews, volume 1, issue 5 (2016). 10.1515/psr-2016-0011 Cited by (3) \| Cite \| Source
Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices (book chapter) In Nano Devices and Sensors Chang, Yao-Feng \| Fowler, Burt \| Chen, Ying-Chen \| Zhou, Fei \| Wu, Xiaohan \| Chen, Yen-Ting \| Wang, Yanzhen \| Xue, Fei \| Lee, Jack C. De Gruyter (2016) 10.1515/9781501501531-005 Cite \| Source
Electroforming and resistive switching in silicon dioxide resistive memory devices (journal article) Fowler, Burt W. \| Chang, Yao-Feng \| Zhou, Fei \| Wang, Yanzhen \| Chen, Pai-Yu \| Xue, Fei \| Chen, Yen-Ting \| Bringhurst, Brad \| Pozder, Scott \| Lee, Jack C. RSC Advances, volume 5, issue 27, pages 21215-21236 (2015). 10.1039/C4RA16078A Cited by (62) \| Cite \| Source
Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization (journal article) Chang, Yao-Feng \| Fowler, Burt \| Chen, Ying-Chen \| Chen, Yen-Ting \| Wang, Yanzhen \| Xue, Fei \| Zhou, Fei \| Lee, Jack C. Journal of Applied Physics, volume 116, issue 4 (2014). 10.1063/1.4891242 Cited by (58) \| Cite \| Source
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing (journal article) Chang, Yao-Feng \| Fowler, Burt \| Chen, Ying-Chen \| Chen, Yen-Ting \| Wang, Yanzhen \| Xue, Fei \| Zhou, Fei \| Lee, Jack C. Journal of Applied Physics, volume 116, issue 4 (2014). 10.1063/1.4891244 Cited by (92) \| Cite \| Source
III-V Gate-wrap-around field-effect-transistors with high-k gate dielectrics (conference) Zhou, Fei \| Xue, Fei \| Chang, Yao-Feng \| Lee, Jack 2014 72nd Annual Device Research Conference (DRC) (2014) Santa Barbara, CA, USA 10.1109/DRC.2014.6872370 Cited by (3) \| Cite \| Source
Effects of sidewall etching on electrical properties of SiOx resistive random access memory (journal article) Wang, Yanzhen \| Fowler, Burt \| Zhou, Fei \| Chang, Yao-Feng \| Chen, Yen-Ting \| Xue, Fei \| Lee, Jack C. Applied Physics Letters, volume 103, issue 21 (2013). 10.1063/1.4832595 Cited by (22) \| Cite \| Source
Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx -based resistive switching memory (journal article) Chang, Yao-Feng \| Ji, Li \| Wang, Yanzhen \| Chen, Pai-Yu \| Zhou, Fei \| Xue, Fei \| Fowler, Burt \| Yu, Edward T. \| Lee, Jack C. Applied Physics Letters, volume 103, issue 19, pages 193508- (2013). 10.1063/1.4829526 Cited by (29) \| Cite \| Source
Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory (journal article) Chang, Yao-Feng \| Ji, Li \| Wu, Zhuo-Jie \| Zhou, Fei \| Wang, Yanzhen \| Xue, Fei \| Fowler, Burt \| Yu, Edward T. \| Ho, Paul S. \| Lee, Jack C. Applied Physics Letters, volume 103, issue 3 (2013). 10.1063/1.4816162 Cited by (30) \| Cite \| Source
Comprehensive trap-level study in SiO<inf>x</inf>-based resistive switching memory (conference) Chang, Yao-Feng \| Chen, Ying-Chen \| Li, Ji \| Xue, Fei \| Wang, Yanzhen \| Zhou, Fei \| Fowler, Burt \| Lee, Jack C. 2013 71st Annual Device Research Conference (DRC) (2013) Notre Dame, IN, USA 10.1109/DRC.2013.6633830 Cited by (4) \| Cite \| Source
Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory (journal article) Chang, Yao-Feng \| Chen, Pai-Yu \| Fowler, Burt \| Chen, Yen-Ting \| Xue, Fei \| Wang, Yanzhen \| Zhou, Fei \| Lee, Jack C. Journal of Applied Physics, volume 112, issue 12 (2012). 10.1063/1.4769218 Cited by (74) \| Cite \| Source
Excellent device performance of 3D In<inf>0.53</inf>Ga<inf>0.47</inf>As gate-wrap-around field-effect-transistors with high-k gate dielectrics (conference) Xue, Fei \| Jiang, Aiting \| Chen, Yen-Ting \| Wang, Yanzhen \| Zhou, Fei \| Chang, Yao-Feng \| Lee, Jack 2012 IEEE International Electron Devices Meeting (IEDM) (2012) San Francisco, CA, USA 10.1109/IEDM.2012.6479116 Cited by (12) \| Cite \| Source
Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films (journal article) Chen, Yen-Ting \| Fowler, Burt \| Wang, Yanzhen \| Xue, Fei \| Zhou, Fei \| Chang, Yao-Feng \| Chen, Pai-Yu \| Lee, Jack C. IEEE Electron Device Letters, volume 33, issue 12, pages 1702-1704 (2012). 10.1109/LED.2012.2218566 Cited by (25) \| Cite \| Source
Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory (journal article) Wang, Yanzhen \| Fowler, Burt \| Chen, Yen-Ting \| Xue, Fei \| Zhou, Fei \| Chang, Yao-Feng \| Lee, Jack C. Applied Physics Letters, volume 101, issue 18 (2012). 10.1063/1.4765356 Cited by (20) \| Cite \| Source
Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics (journal article) Xue, Fei \| Jiang, Aiting \| Zhao, Han \| Chen, Yen-Ting \| Wang, Yanzhen \| Zhou, Fei \| Lee, Jack IEEE Electron Device Letters, volume 33, issue 9, pages 1255-1257 (2012). 10.1109/LED.2012.2205214 Cited by (9) \| Cite \| Source
Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2 O3 -InP metal-oxide-semiconductor field-effect transistor (journal article) Wang, Yanzhen \| Chen, Yen-Ting \| Xue, Fei \| Zhou, Fei \| Lee, Jack C. Applied Physics Letters, volume 101, issue 6, pages 063505- (2012). 10.1063/1.4745203 Cited by (2) \| Cite \| Source
Study of polarity effect in SiOx -based resistive switching memory (journal article) Chang, Yao-Feng \| Chen, Pai-Yu \| Chen, Yen-Ting \| Xue, Fei \| Wang, Yanzhen \| Zhou, Fei \| Fowler, Burt \| Lee, Jack C. Applied Physics Letters, volume 101, issue 5, pages 052111- (2012). 10.1063/1.4742894 Cited by (50) \| Cite \| Source
HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (journal article) Wang, Yanzhen \| Chen, Yen-Ting \| Xue, Fei \| Zhou, Fei \| Lee, Jack C. Applied Physics Letters, volume 100, issue 24 (2012). 10.1063/1.4729606 Cited by (8) \| Cite \| Source