Matthew R. Peart

ScholarGPS™ ID: 24286784096620

Affiliation

Lehigh University, Bethlehem, United States

Affiliation History

Field

Engineering and Computer Science

Discipline

Electrical and Computer Engineering

Top Specialties

Electric Power

Metrics Summary

Publication Count

Predicted Citations

Predicted h-index

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF


Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy (journal article) Borovac, Damir \| Sun, Wei \| Peart, Matthew R. \| Song, Renbo \| Wierer, Jonathan J. \| Tansu, Nelson Journal of Crystal Growth, volume 548 (2020). 10.1016/j.jcrysgro.2020.125847 Cited by (6) \| Cite \| Source
Electrical properties of MgO/GaN metal-oxide-semiconductor structures (journal article) Ogidi-Ekoko, Onoriode N. \| Goodrich, Justin C. \| Howzen, Alexandra J. \| Peart, Matthew R. \| Strandwitz, Nicholas C. \| Wierer, Jonathan J. \| Tansu, Nelson Solid-State Electronics, volume 172 (2020). 10.1016/j.sse.2020.107881 Cited by (6) \| Cite \| Source
AlInN/GaN diodes for power electronic devices (journal article) Peart, Matthew R. \| Borovac, Damir \| Sun, Wei \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Applied Physics Express, volume 13, issue 9, pages 091006- (2020). 10.35848/1882-0786/abb180 Cited by (5) \| Cite \| Source
Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering (journal article) Peart, Matthew R. \| Wierer, Jonathan J. IEEE Transactions on Electron Devices, volume 67, issue 2, pages 571-575 (2020). 10.1109/TED.2019.2958485 Cited by (1) \| Cite \| Source
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers (journal article) Al Muyeed, Syed Ahmed \| Sun, Wei \| Peart, Matthew R. \| Lentz, Rebecca M. \| Wei, Xiongliang \| Borovac, Damir \| Song, Renbo \| Tansu, Nelson \| Wierer, Jonathan J. Journal of Applied Physics, volume 126, issue 21 (2019). 10.1063/1.5126965 Cited by (12) \| Cite \| Source
Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices (journal article) Peart, Matthew R. \| Wei, Xiongliang \| Borovac, Damir \| Sun, Wei \| Tansu, Nelson \| Wierer, Jonathan J. ACS Applied Electronic Materials, volume 1, issue 8, pages 1367-1371 (2019). 10.1021/acsaelm.9b00266 Cited by (8) \| Cite \| Source
AlInN for Vertical Power Electronic Devices (journal article) Peart, Matthew R. \| Tansu, Nelson \| Wierer, Jonathan J. IEEE Transactions on Electron Devices, volume 65, issue 10, pages 4276-4281 (2018). 10.1109/TED.2018.2866980 Cited by (10) \| Cite \| Source
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching (journal article) Wei, Xiongliang \| Al Muyeed, Syed Ahmed \| Peart, Matthew R. \| Sun, Wei \| Tansu, Nelson \| Wierer, Jonathan J. Applied Physics Letters, volume 113, issue 12 (2018). 10.1063/1.5046857 Cited by (8) \| Cite \| Source
Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters (conference) Wei, Xiongliang \| Muyeed, Syed Ahmed Al \| Peart, Matthew \| Tansu, Nelson \| Wierer, Jonathan J. 2018 IEEE Photonics Conference (IPC) (2018) Reston, VA 10.1109/IPCon.2018.8527308 Cite \| Source