Matthew R. Peart
ScholarGPS™ ID: 24286784096620
Publications and Citation History
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Journal of Crystal Growth, volume 548 (2020).
Solid-State Electronics, volume 172 (2020).
Applied Physics Express, volume 13, issue 9, pages 091006- (2020).
Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering (journal article)
IEEE Transactions on Electron Devices, volume 67, issue 2, pages 571-575 (2020).
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers (journal article)
Journal of Applied Physics, volume 126, issue 21 (2019).
ACS Applied Electronic Materials, volume 1, issue 8, pages 1367-1371 (2019).
IEEE Transactions on Electron Devices, volume 65, issue 10, pages 4276-4281 (2018).
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching (journal article)
Applied Physics Letters, volume 113, issue 12 (2018).
2018 IEEE Photonics Conference (IPC) (2018)