Wei Cao

ScholarGPS® ID: 22422620374709

Affiliation

University of California, Santa Barbara, Santa Barbara, United States

Affiliation History

Field

Engineering and Computer Science

Discipline

Electrical and Computer Engineering

Top Specialties

Field-effect Transistor | Semiconductor | Logic | Mobilities | Nanowire

Metrics Summary

Publication Count

Predicted Citations

2,998

Predicted h-index

Ranking

Publications and Citation History

Publications based on Top Specialties

Types of Publication

Publications
Books
Patents
NIH/NSF

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An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs (journal article) Pal, Arnab \| Chai, Zichun \| Jiang, Junkai \| Cao, Wei \| Davies, Mike \| De, Vivek \| Banerjee, Kaustav Nature Communications, volume 15, issue 1 (2024). 10.1038/s41467-024-46397-3 Cite \| Source
A Materials-Device Co-Design Framework for Realizing Ultra Energy-Efficient All-2D Spin-Logic Circuits with 2D-Materials (conference) Zhang, Shuo \| Pal, Arnab \| Yin, Wenyan \| Cao, Wei \| Banerjee, Kaustav 2023 International Electron Devices Meeting (IEDM) (2023) San Francisco, CA, USA 10.1109/IEDM45741.2023.10413758 Cite \| Source
Advancing High-Performance Large-Scale Quantum Computing with Cryogenic 2D-CMOS (conference) Agashiwala, Kunjesh \| Pal, Arnab \| Cui, Hang \| Chavan, Tanmay \| Cao, Wei \| Banerjee, Kaustav 2023 International Electron Devices Meeting (IEDM) (2023) San Francisco, CA, USA 10.1109/IEDM45741.2023.10413702 Cite \| Source
The future transistors (journal article) Cao, Wei \| Bu, Huiming \| Vinet, Maud \| Cao, Min \| Takagi, Shinichi \| Hwang, Sungwoo \| Ghani, Tahir \| Banerjee, Kaustav Nature, volume 620, issue 7974, pages 501-515 (2023). 10.1038/s41586-023-06145-x Cited by (74) \| Cite \| Source
Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage (journal article) Pal, Arnab \| Zhang, Shuo \| Chavan, Tanmay \| Agashiwala, Kunjesh \| Yeh, Chao‐Hui \| Cao, Wei \| Banerjee, Kaustav Advanced Materials, volume 35, issue 27 (2023). 10.1002/adma.202109894 Cited by (31) \| Cite \| Source
Exploration and Exploitation of Strain Engineering in 2D-FETs (conference) Kumar, Ankit \| Pal, Arnab \| Parto, Kamyar \| Cao, Wei \| Banerjee, Kaustav 2023 Device Research Conference (DRC) (2023) Santa Barbara, CA, USA 10.1109/DRC58590.2023.10187107 Cite \| Source
Two-dimensional materials enabled next-generation low-energy compute and connectivity (journal article) Pal, Arnab \| Agashiwala, Kunjesh \| Jiang, Junkai \| Zhang, Dujiao \| Chavan, Tanmay \| Kumar, Ankit \| Yeh, Chao-Hui \| Cao, Wei \| Banerjee, Kaustav MRS Bulletin, volume 46, issue 12, pages 1211-1228 (2021). 10.1557/s43577-022-00270-0 Cited by (10) \| Cite \| Source
One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across /Metal Interfaces (journal article) Parto, Kamyar \| Pal, Arnab \| Chavan, Tanmay \| Agashiwala, Kunjesh \| Yeh, Chao-Hui \| Cao, Wei \| Banerjee, Kaustav Physical Review Applied, volume 15, issue 6 (2021). 10.1103/PhysRevApplied.15.064068 Cited by (35) \| Cite \| Source
0.5T0.5R—An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures (journal article) Zhang, Dujiao \| Yeh, Chao-Hui \| Cao, Wei \| Banerjee, Kaustav IEEE Transactions on Electron Devices, volume 68, issue 4, pages 2033-2040 (2021). 10.1109/TED.2021.3057598 Cited by (26) \| Cite \| Source
A mode-balanced reconfigurable logic gate built in a van der Waals strata (journal article) Cao, Wei \| Chu, Jae Hwan \| Parto, Kamyar \| Banerjee, Kaustav npj 2D Materials and Applications, volume 5, issue 1 (2021). 10.1038/s41699-020-00198-6 Cited by (12) \| Cite \| Source
0.5T0.5R - Introducing an Ultra-Compact Memory Cell Enabled by Shared Graphene Edge-Contact and h-BN Insulator (conference) Yeh, Chao-Hui \| Zhang, Dujiao \| Cao, Wei \| Banerjee, Kaustav 2020 IEEE International Electron Devices Meeting (IEDM) (2020) San Francisco, CA, USA 10.1109/IEDM13553.2020.9371902 Cited by (4) \| Cite \| Source
A Compact Current–Voltage Model for 2-D-Semiconductor-Based Lateral Homo-/Hetero-Junction Tunnel-FETs (journal article) Pal, Arnab \| Cao, Wei \| Banerjee, Kaustav IEEE Transactions on Electron Devices, volume 67, issue 10, pages 4473-4481 (2020). 10.1109/TED.2020.3011350 Cited by (6) \| Cite \| Source
Impact of Transport Anisotropy on the Performance of van der Waals Materials-Based Electron Devices (journal article) Cao, Wei \| Huang, Mengqi \| Yeh, Chao-Hui \| Parto, Kamyar \| Banerjee, Kaustav IEEE Transactions on Electron Devices, volume 67, issue 3, pages 1310-1316 (2020). 10.1109/TED.2020.2970394 Cited by (7) \| Cite \| Source
Is negative capacitance FET a steep-slope logic switch? (journal article) Cao, Wei \| Banerjee, Kaustav Nature Communications, volume 11, issue 1 (2020). 10.1038/s41467-019-13797-9 Cited by (104) \| Cite \| Source
Computational Study of Spin Injection in 2D Materials (conference) Pal, Arnab \| Parto, Kamyar \| Agashiwala, Kunjesh \| Cao, Wei \| Banerjee, Kaustav 2019 IEEE International Electron Devices Meeting (IEDM) (2019) San Francisco, CA, USA 10.1109/IEDM19573.2019.8993578 Cited by (3) \| Cite \| Source
Area-Selective-CVD Technology Enabled Top-Gated and Scalable 2D-Heterojunction Transistors with Dynamically Tunable Schottky Barrier (conference) Yeh, Chao-Hui \| Cao, Wei \| Pal, Arnab \| Parto, Kamyar \| Banerjee, Kaustav 2019 IEEE International Electron Devices Meeting (IEDM) (2019) San Francisco, CA, USA 10.1109/IEDM19573.2019.8993600 Cited by (16) \| Cite \| Source
Ultimate Monolithic-3D Integration With 2D Materials: Rationale, Prospects, and Challenges (journal article) Jiang, Junkai \| Parto, Kamyar \| Cao, Wei \| Banerjee, Kaustav IEEE Journal of the Electron Devices Society, volume 7 (2019). 10.1109/JEDS.2019.2925150 Cited by (79) \| Cite \| Source
Interfacial Thermal Conductivity of 2D Layered Materials: An Atomistic Approach (conference) Parto, Kamyar \| Pal, Arnab \| Xie, Xuejun \| Cao, Wei \| Banerjee, Kaustav 2018 IEEE International Electron Devices Meeting (IEDM) (2018) San Francisco, CA 10.1109/IEDM.2018.8614575 Cited by (5) \| Cite \| Source
Can Kinetic Inductance in Low-Dimensional Materials Enable a New Generation of RF-Electronics? (conference) Agashiwala, Kunjesh \| Pal, Arnab \| Cao, Wei \| Jiang, Junkai \| Banerjee, Kaustav 2018 IEEE International Electron Devices Meeting (IEDM) (2018) San Francisco, CA 10.1109/IEDM.2018.8614525 Cited by (2) \| Cite \| Source
2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges (journal article) Cao, Wei \| Jiang, Junkai \| Xie, Xuejun \| Pal, Arnab \| Chu, Jae Hwan \| Kang, Jiahao \| Banerjee, Kaustav IEEE Transactions on Electron Devices, volume 65, issue 10, pages 4109-4121 (2018). 10.1109/TED.2018.2867441 Cited by (77) \| Cite \| Source